An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement

被引：0
|
作者：
Gao, Hanqi [1 ]
Jin, Jing [1 ]
Zhou, Jianjun [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Ctr Analog RF Integrated Circuits, Sch Microelect, Shanghai 200240, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2024年 / 12卷
基金：
中国国家自然科学基金;
关键词：
Noise; Semiconductor device modeling; MOSFET; Integrated circuit modeling; Noise figure; Logic gates; Circuits; Equivalent circuits; parameter extraction; noise model; small signal model; noise figure measurement; CHANNEL NOISE; FREQUENCY; EXTRACTION;
D O I：
10.1109/JEDS.2024.3453408
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An extraction method to obtain the noise model parameter $T_{\mathrm { d}}$ in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for 16x1x2 mu m (number of gate fingers x unit gatewidth x cells) gatelength MOSFETs.
引用
收藏
页码：692 / 697
页数：6
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