Relationship between Tg of Polyimide Resin and Resist Sensitivity in Three-Component Chemically Amplified Polyimide Resist

被引：0
|
作者：
Madokoro, Daiki [1 ]
Takashima, Katsuaki [1 ]
Tanaka, Susumu [2 ]
Yamaoka, Kohei [2 ]
Yuba, Tomoyuki [2 ]
Horibe, Hideo [1 ]
机构：
[1] Osaka Metropolitan Univ, Grad Sch Engn, Dept Chem & Bioengn, 3-3-138 Sumiyoshi Ku, Osaka 5588585, Japan
[2] Toray Industries Ltd, Elect & Imaging Mat Res Labs, 3-1-2 Sonomiya, Otsu, Shiga 5200842, Japan
来源：
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2024年 / 37卷 / 05期
关键词：
Polyimide resist; Chemically amplified resist; Deprotection reaction; Acid diffusion; DISSOLUTION; INHIBITOR; PRECURSOR; ACID; DYES;
D O I：
暂无
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
In this paper, we have explained a relationship between the resist sensitivity and Tg of the base polymers in three-component chemically amplified polyimide resists. Three-component chemically amplified resists consist of a base polymer, a photoacid generator (PAG), and a dissolution inhibitor that is deprotected by acid. Three polyimide resins with different Tg or the novolac resin were used as the base polymer. The polyimide resist had lower resist sensitivity than the novolac resist. The UV light absorption of the base polymers hardly inhibited the photoreaction of PAG. The higher the Tg of the base polymer, the more the deprotection reaction and acid diffusion in the resist films were promoted. From these results, a negative correlation between the Tg of the base polymer and the resist sensitivity was discovered.
引用
收藏
页码：517 / 522
页数：6
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