Structural characteristics and polarization switching behaviors in HfO2-ZrO2 2-ZrO 2 ferroelectric nanolaminates

被引:0
|
作者
Yang, Zhibin [1 ]
Zeng, Binjian [1 ]
Ju, Changfan [1 ]
Liao, Jiajia [2 ]
Zheng, Shuaizhi [1 ]
Liao, Min [2 ]
Zhou, Yichun [2 ]
机构
[1] Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710126, Peoples R China
基金
中国国家自然科学基金;
关键词
Ferroelectric memory; Ferroelectric thin films; Polarization switching; HfO2-ZrO2; nanolaminates; THIN-FILMS;
D O I
10.1016/j.jallcom.2024.175909
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hf 0.5 Zr 0.5 O 2 solid solution ferroelectric thin film is an extremely promising candidate for ferroelectric memories due to the high compatibility with silicon-based technology, the large process window, and low crystallization temperature. Recent attentions focus on HfO2-ZrO2 2-ZrO 2 nanolaminates with equal thicknesses of the HfO2 2 and ZrO2 2 layers, which offer opportunities to enhance the ferroelectricity and reliability of the Hf 0.5 Zr 0.5 O 2 solid solution thin films. But their structural characteristics and polarization switching behaviors have not been expounded clearly. In this work, we clarify the local epitaxy relationship between the HfO2 2 and ZrO2 2 layers in the HfO2 2 (4 nm)-ZrO2 2 (4 nm) nanolaminate thin film, as well as the improved crystallinity compared to the 8-nm-thick Hf 0.5 Zr 0.5 O 2 solid solution thin film. These structural characteristics result in the significantly enhanced ferroelectricity and polarization fatigue performances of the HfO2-ZrO2 2-ZrO 2 nanolaminate thin film. Moreover, we find that the polarization switching behavior of the HfO2-ZrO2 2-ZrO 2 nanolaminate follows the nucleation-limited switching model, and demonstrates a strong temperature dependence that the higher operation temperature is, the faster switching speed becomes. This work not only provides the key insights into the HfO2-ZrO2 2-ZrO 2 ferroelectric nano- laminates for memory devices applications, but also contributes to the fundamental understandings of the HfO2- 2- based ferroelectric thin films.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Engineering of Ferroelectric HfO2-ZrO2 Nanolaminates
    Weeks, Stephen L.
    Pal, Ashish
    Narasimhan, Vijay K.
    Littau, Karl A.
    Chiang, Tony
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (15) : 13440 - 13447
  • [2] Switching Dynamics of HfO2-ZrO2 Nanolaminates With Different Laminate Thicknesses
    Ke, Xiaoyu
    Chai, Junshuai
    Shao, Xianzhou
    Duan, Jiahui
    Sun, Xiaoqing
    Yang, Shuai
    Xiang, Jinjuan
    Han, Kai
    Wang, Yanrong
    Xu, Hao
    Wang, Xiaolei
    Zhang, Jing
    Wang, Wenwu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (06) : 3651 - 3658
  • [3] Switching dynamics of ferroelectric HfO2-ZrO2 with various ZrO2 contents
    Li, Yuxing
    Li, Jingzhou
    Liang, Renrong
    Zhao, Ruiting
    Xiong, Benkuan
    Liu, Houfang
    Tian, He
    Yang, Yi
    Ren, Tian-Ling
    APPLIED PHYSICS LETTERS, 2019, 114 (14)
  • [4] Demonstration of ferroelectricity in PLD grown HfO2-ZrO2 nanolaminates
    Das, Sree Sourav
    Fox, Zach
    Mia, Md Dalim
    Samuels, Brian C.
    Saha, Rony
    Droopad, Ravi
    AIMS MATERIALS SCIENCE, 2023, 10 (02) : 342 - 355
  • [5] Effect of thickness scaling on the switching dynamics of ferroelectric HfO2-ZrO2 capacitors
    Peng, Yue
    Wang, Zhe
    Xiao, Wenwu
    Ma, Yu
    Liu, Fenning
    Deng, Xinran
    Yu, Xiao
    Liu, Yan
    Han, Genquan
    Hao, Yue
    CERAMICS INTERNATIONAL, 2022, 48 (19) : 28489 - 28495
  • [6] A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO2-ZrO2-HfO2 and ZrO2-HfO2-ZrO2 Superlattice Ferroelectric Films
    Li, Kaixuan
    Peng, Yue
    Xiao, Wenwu
    Liu, Fenning
    Zhang, Yueyuan
    Feng, Ze
    Dong, Hong
    Liu, Yan
    Hao, Yue
    Han, Genquan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (04) : 1802 - 1807
  • [7] Ultrafast Switching of Ferroelectric HfO2-ZrO2 Under Low Voltage With Layered Structure
    Song, Yifan
    Yu, Jiajie
    Wang, Zhuming
    Xu, Kangli
    Liu, Yongkai
    Wang, Chen
    Chen, Kun
    Sun, Qingqing
    Zhang, David Wei
    Chen, Lin
    IEEE ELECTRON DEVICE LETTERS, 2025, 46 (01) : 12 - 15
  • [8] Ferroelectric HfO2-ZrO2 Multilayers with Reduced Wake-Up
    Mandal, Barnik
    Philippe, Adrian-Marie
    Valle, Nathalie
    Defay, Emmanuel
    Granzow, Torsten
    Glinsek, Sebastjan
    ACS OMEGA, 2025, 10 (13): : 13141 - 13147
  • [9] Effects of plasma power on ferroelectric properties of HfO2-ZrO2 nanolaminates produced by plasma enhanced atomic layer deposition
    Ahn, Yeonghwan
    Jeon, Yerin
    Lim, Seokwon
    Kim, Jiwoong
    Kim, Jisu
    Duy, Le Thai
    Seo, Hyungtak
    SURFACES AND INTERFACES, 2023, 37
  • [10] Physical origin of the endurance improvement for HfO2-ZrO2 superlattice ferroelectric film
    Gong, Zhi
    Chen, Jiajia
    Peng, Yue
    Liu, Yan
    Yu, Xiao
    Han, Genquan
    APPLIED PHYSICS LETTERS, 2022, 121 (24)