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- [1] Engineering of Ferroelectric HfO2-ZrO2 NanolaminatesACS APPLIED MATERIALS & INTERFACES, 2017, 9 (15) : 13440 - 13447Weeks, Stephen L.论文数: 0 引用数: 0 h-index: 0机构: Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USA Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USAPal, Ashish论文数: 0 引用数: 0 h-index: 0机构: Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USA Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USANarasimhan, Vijay K.论文数: 0 引用数: 0 h-index: 0机构: Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USA Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USALittau, Karl A.论文数: 0 引用数: 0 h-index: 0机构: Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USA Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USAChiang, Tony论文数: 0 引用数: 0 h-index: 0机构: Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USA Intermolecular Inc, 3011 N 1st St, San Jose, CA 95134 USA
- [2] Switching Dynamics of HfO2-ZrO2 Nanolaminates With Different Laminate ThicknessesIEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (06) : 3651 - 3658Ke, Xiaoyu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaChai, Junshuai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaShao, Xianzhou论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaDuan, Jiahui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaSun, Xiaoqing论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaYang, Shuai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaXiang, Jinjuan论文数: 0 引用数: 0 h-index: 0机构: Beijing Superstring Acad Memory Technol, Beijing 100176, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaHan, Kai论文数: 0 引用数: 0 h-index: 0机构: Weifang Univ, Sch Phys & Elect Informat, Weifang 261061, Shandong, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Yanrong论文数: 0 引用数: 0 h-index: 0机构: North China Univ Technol, Sch Informat Sci & Technol, Beijing 100144, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaXu, Hao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Xiaolei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaZhang, Jing论文数: 0 引用数: 0 h-index: 0机构: North China Univ Technol, Sch Informat Sci & Technol, Beijing 100144, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Wenwu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
- [3] Switching dynamics of ferroelectric HfO2-ZrO2 with various ZrO2 contentsAPPLIED PHYSICS LETTERS, 2019, 114 (14)Li, Yuxing论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLi, Jingzhou论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLiang, Renrong论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaZhao, Ruiting论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaXiong, Benkuan论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLiu, Houfang论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaTian, He论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaYang, Yi论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaRen, Tian-Ling论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
- [4] Demonstration of ferroelectricity in PLD grown HfO2-ZrO2 nanolaminatesAIMS MATERIALS SCIENCE, 2023, 10 (02) : 342 - 355Das, Sree Sourav论文数: 0 引用数: 0 h-index: 0机构: Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USA Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USAFox, Zach论文数: 0 引用数: 0 h-index: 0机构: Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USA Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USAMia, Md Dalim论文数: 0 引用数: 0 h-index: 0机构: Texas State Univ, Mat Sci Engn & Commercializat, San Marcos, TX 78666 USA Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USASamuels, Brian C.论文数: 0 引用数: 0 h-index: 0机构: Texas State Univ, Mat Sci Engn & Commercializat, San Marcos, TX 78666 USA Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USA论文数: 引用数: h-index:机构:Droopad, Ravi论文数: 0 引用数: 0 h-index: 0机构: Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USA Texas State Univ, Mat Sci Engn & Commercializat, San Marcos, TX 78666 USA Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USA
- [5] Effect of thickness scaling on the switching dynamics of ferroelectric HfO2-ZrO2 capacitorsCERAMICS INTERNATIONAL, 2022, 48 (19) : 28489 - 28495Peng, Yue论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China China Res Ctr Intelligent Chips, Zhejiang Lab, Hangzhou 311121, Peoples R China Room 317A,East Main Bldg,2 South Taibai Rd, Xian 710071, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R ChinaWang, Zhe论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R ChinaXiao, Wenwu论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China Xian UniIC Semicond Co Ltd, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R ChinaMa, Yu论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R ChinaLiu, Fenning论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R ChinaDeng, Xinran论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R ChinaYu, Xiao论文数: 0 引用数: 0 h-index: 0机构: China Res Ctr Intelligent Chips, Zhejiang Lab, Hangzhou 311121, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R ChinaLiu, Yan论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China China Res Ctr Intelligent Chips, Zhejiang Lab, Hangzhou 311121, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R ChinaHan, Genquan论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China China Res Ctr Intelligent Chips, Zhejiang Lab, Hangzhou 311121, Peoples R China Xidian Univ, Hangzhou Inst Technol, Hangzhou 311200, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R ChinaHao, Yue论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China
- [6] A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO2-ZrO2-HfO2 and ZrO2-HfO2-ZrO2 Superlattice Ferroelectric FilmsIEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (04) : 1802 - 1807Li, Kaixuan论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R ChinaPeng, Yue论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R ChinaXiao, Wenwu论文数: 0 引用数: 0 h-index: 0机构: Xian UniIC Semicond Co Ltd, Xian 710075, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R ChinaLiu, Fenning论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R ChinaZhang, Yueyuan论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R ChinaFeng, Ze论文数: 0 引用数: 0 h-index: 0机构: Nankai Univ, Key Lab Photoelect Thin Film Devices & Technol Tia, Tianjin 300071, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R ChinaDong, Hong论文数: 0 引用数: 0 h-index: 0机构: Nankai Univ, Key Lab Photoelect Thin Film Devices & Technol Tia, Tianjin 300071, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R ChinaLiu, Yan论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R ChinaHao, Yue论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian 710071, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R ChinaHan, Genquan论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian 710071, Peoples R China Xidian Univ, Hangzhou Inst Technol, Hangzhou 311200, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
- [7] Ultrafast Switching of Ferroelectric HfO2-ZrO2 Under Low Voltage With Layered StructureIEEE ELECTRON DEVICE LETTERS, 2025, 46 (01) : 12 - 15Song, Yifan论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaYu, Jiajie论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaWang, Zhuming论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaXu, Kangli论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaLiu, Yongkai论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaWang, Chen论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaChen, Kun论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaSun, Qingqing论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaZhang, David Wei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaChen, Lin论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Jiashan Fudan Inst, Jiashan 314100, Zhejiang, Peoples R China Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
- [8] Ferroelectric HfO2-ZrO2 Multilayers with Reduced Wake-UpACS OMEGA, 2025, 10 (13): : 13141 - 13147Mandal, Barnik论文数: 0 引用数: 0 h-index: 0机构: Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, Luxembourg Univ Luxembourg, L-4365 Esch Sur Alzette, Luxembourg Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, LuxembourgPhilippe, Adrian-Marie论文数: 0 引用数: 0 h-index: 0机构: Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, Luxembourg Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, LuxembourgValle, Nathalie论文数: 0 引用数: 0 h-index: 0机构: Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, Luxembourg Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, LuxembourgDefay, Emmanuel论文数: 0 引用数: 0 h-index: 0机构: Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, Luxembourg Univ Luxembourg, L-4365 Esch Sur Alzette, Luxembourg Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, LuxembourgGranzow, Torsten论文数: 0 引用数: 0 h-index: 0机构: Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, Luxembourg Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, LuxembourgGlinsek, Sebastjan论文数: 0 引用数: 0 h-index: 0机构: Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, Luxembourg Luxembourg Inst Sci & Technol LIST, Smart Mat Unit, L-4422 Belvaux, Luxembourg
- [9] Effects of plasma power on ferroelectric properties of HfO2-ZrO2 nanolaminates produced by plasma enhanced atomic layer depositionSURFACES AND INTERFACES, 2023, 37Ahn, Yeonghwan论文数: 0 引用数: 0 h-index: 0机构: Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaJeon, Yerin论文数: 0 引用数: 0 h-index: 0机构: Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaLim, Seokwon论文数: 0 引用数: 0 h-index: 0机构: Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaKim, Jiwoong论文数: 0 引用数: 0 h-index: 0机构: Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaKim, Jisu论文数: 0 引用数: 0 h-index: 0机构: Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaDuy, Le Thai论文数: 0 引用数: 0 h-index: 0机构: Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaSeo, Hyungtak论文数: 0 引用数: 0 h-index: 0机构: Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea Ajou Univ, Dept Mat Sci & Engn, Suwon 16499, South Korea Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea
- [10] Physical origin of the endurance improvement for HfO2-ZrO2 superlattice ferroelectric filmAPPLIED PHYSICS LETTERS, 2022, 121 (24)Gong, Zhi论文数: 0 引用数: 0 h-index: 0机构: Res Ctr Intelligent Chips & Devices, Beijing, Peoples R China Res Ctr Intelligent Chips & Devices, Beijing, Peoples R ChinaChen, Jiajia论文数: 0 引用数: 0 h-index: 0机构: Res Ctr Intelligent Chips & Devices, Beijing, Peoples R China Res Ctr Intelligent Chips & Devices, Beijing, Peoples R ChinaPeng, Yue论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian, Peoples R China Res Ctr Intelligent Chips & Devices, Beijing, Peoples R ChinaLiu, Yan论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian, Peoples R China Res Ctr Intelligent Chips & Devices, Beijing, Peoples R ChinaYu, Xiao论文数: 0 引用数: 0 h-index: 0机构: Res Ctr Intelligent Chips & Devices, Beijing, Peoples R China Res Ctr Intelligent Chips & Devices, Beijing, Peoples R ChinaHan, Genquan论文数: 0 引用数: 0 h-index: 0机构: Res Ctr Intelligent Chips & Devices, Beijing, Peoples R China Res Ctr Intelligent Chips & Devices, Beijing, Peoples R China