A Detailed Analytical Switching Transient Model for Silicon Superjunction MOSFET and SiC Schottky Diode Pair

被引:0
作者
Mandal, Manish [1 ]
Roy, Shamibrota Kishore [1 ]
Basu, Kaushik [1 ]
机构
[1] Indian Inst Sci, Dept Elect Engn, Bangalore 560012, India
关键词
Silicon; Analytical models; Logic gates; Capacitance; Switches; Silicon carbide; Semiconductor device modeling; Analytical model; double pulse test (DPT); loss; MOSFET; Schottky diode; SiC; silicon superjunction; switching transient; POWER; PERFORMANCE; GAN;
D O I
10.1109/TPEL.2024.3414278
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With high reliability and good cost-performance ratio, silicon superjunction MOSFETS (Si SJMOS) and SiC SBD pair is often preferred in commercial single-phase power factor correction applications. Switching dynamics of Si SJMOS are different compared to 650 V wide bandgap devices due to differences in device characteristics. This article presents an improved analytical model to study the switching dynamics of Si SJMOS and SiC SBD pair. Unlike the existing literature on high-voltage Si MOSFETS, this article considers the nonlinearities in channel current and internal capacitances of Si SJMOS, the nonlinear reverse-biased capacitance of SiC SBD, along with parasitic gate-drain capacitance arising due to PCB layout. As a result, the proposed analytical model presents a significant improvement over the existing models of high-voltage Si MOSFET in predicting switching loss, time, (dv/dt), (di/dt), etc. Experimental and simulation results for three 650 V Si SJMOS and SiC SBD pairs with different current ratings provide validation of the proposed analytical model.
引用
收藏
页码:13044 / 13061
页数:18
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