Influence of different molar concentration on the structural, optical, electrical and photo diode properties of MoO3 thin films

This article discusses an eco-friendly method for creating metal-insulator-semiconductor (MIS) diodes. MoO3 thin films are prepared at different mole concentrations (0.01, 0.03, 0.05 and 0.07 M) using a Jet Nebulizer Spray Pyrolysis (JNSP) methodology. An orthorhombic phase, which is of special interest because of its potential in electronic applications, was discovered by structural investigation using X-ray diffraction (XRD) in the 0.05 M MoO3 film. Field emission scanning electron microscopy (FE-SEM) pictures of the 0.05 M MoO3 film show a distinct nanoplate shape, indicating positive characteristics for photovoltaic applications. UV-Vis spectroscopy revealed an energy bandgap of 3.21 eV for this concentration. This corresponds to the requisite electronic parameters for a high-performance MIS diode. Then the DC electrical conductivity of the films showed a monotonic rise with the concentration of MoO3, peaking at 0.05 M, suggesting improved carrier transport characteristics. The I-V characteristics of the Cu/MoO3/p-Si diodes revealed that current flows mostly across interfaces and is controlled by carrier concentration. The 0.05 M MoO3 substance exhibited a considerable increase in photocurrent. This work explains the optimized MoO3 concentration and the morphology using the JNSP approach can result in the production of highly efficient MIS diodes suited for a wide range of optoelectronic applications.