Understanding the effect of grain boundary solute segregation on the creep behaviour of thermally stable nanocrystalline materials: a theoretical approach
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作者:
Wani, I.
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Indian Inst Technol Bhubaneswar, Sch Minerals Met & Mat Engn, Bhubaneswar 752050, Odisha, IndiaIndian Inst Technol Bhubaneswar, Sch Minerals Met & Mat Engn, Bhubaneswar 752050, Odisha, India
Wani, I.
[1
]
Rai, N.
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Indian Inst Technol Bhubaneswar, Sch Minerals Met & Mat Engn, Bhubaneswar 752050, Odisha, India
Univ Illinois, Dept Mech & Ind Engn, Chicago, IL USAIndian Inst Technol Bhubaneswar, Sch Minerals Met & Mat Engn, Bhubaneswar 752050, Odisha, India
Rai, N.
[1
,2
]
Murty, K. L.
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North Carolina State Univ, Dept Nucl Engn, Raleigh, NC USAIndian Inst Technol Bhubaneswar, Sch Minerals Met & Mat Engn, Bhubaneswar 752050, Odisha, India
Murty, K. L.
[3
]
Gollapudi, S.
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Indian Inst Technol Bhubaneswar, Sch Minerals Met & Mat Engn, Bhubaneswar 752050, Odisha, IndiaIndian Inst Technol Bhubaneswar, Sch Minerals Met & Mat Engn, Bhubaneswar 752050, Odisha, India
Gollapudi, S.
[1
]
机构:
[1] Indian Inst Technol Bhubaneswar, Sch Minerals Met & Mat Engn, Bhubaneswar 752050, Odisha, India
[2] Univ Illinois, Dept Mech & Ind Engn, Chicago, IL USA
[3] North Carolina State Univ, Dept Nucl Engn, Raleigh, NC USA
In this work, we provide a theoretical framework to evaluate the beneficial effect of solute segregation on the creep behaviour of nanocrystalline materials. We choose copper as the model system and employ the Murdoch and Schuh model to identify Cu-3Zr as a binary system with high thermal stability in its nanocrystalline state. The effect of the segregation of Zr on the grain boundary diffusivity was evaluated using the Hondros and Henderson model. The effect of solute segregation on threshold stress for vacancy emission and absorption at the grain boundaries was evaluated using the Mohamed model. Using these in conjunction with the Bird Mukherjee Dorn equation for creep allowed us to compare the diffusional creep behaviour of nc copper and nc Cu-3Zr. The nc Cu-3Zr system with a grain size of 49 nm demonstrated a higher creep resistance compared to nc Cu bearing a similar grain size. However, the creep resistance of both systems was found to be significantly inferior when compared to the conventional coarse-grained Cu bearing a grain size of 1 mu m.
机构:
Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R ChinaTianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China
Li, Qifeng
Zhao, Yingxin
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Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China
Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R ChinaTianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China
Zhao, Yingxin
Xu, Lianyong
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Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R ChinaTianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China
机构:
School of Materials Science and Engineering, Hebei University of Technology, Tianjin
Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, TianjinSchool of Materials Science and Engineering, Hebei University of Technology, Tianjin
Jiang S.
Ming K.
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School of Materials Science and Engineering, Hebei University of Technology, Tianjin
Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, TianjinSchool of Materials Science and Engineering, Hebei University of Technology, Tianjin
Ming K.
Zheng S.
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School of Materials Science and Engineering, Hebei University of Technology, Tianjin
Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, TianjinSchool of Materials Science and Engineering, Hebei University of Technology, Tianjin
机构:
Hong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China
Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R ChinaHong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China
Niu, M. C.
Chen, C. J.
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Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaHong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China
Chen, C. J.
Li, W.
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机构:
Hong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shi changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R ChinaHong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China
Li, W.
Yang, K.
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Chinese Acad Sci, Inst Met Res, Shi changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R ChinaHong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China
Yang, K.
Luan, J. H.
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City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China
Luan, J. H.
Wang, W.
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Chinese Acad Sci, Inst Met Res, Shi changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R ChinaHong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China
Wang, W.
Jiao, Z. B.
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机构:
Hong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China
Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R ChinaHong Kong Polytech Univ, Res Inst Adv Mfg, Dept Mech Engn, Hong Kong, Peoples R China