Plasmonic effect of gold nanoparticles on rear side of flexible black silicon wafer fabricated by aluminum-assisted chemical etching

被引:0
作者
Omar, Halo Dalshad [1 ,2 ]
Uddin, Shahnawaz [1 ,3 ]
Braim, Farhank Saber [4 ]
Hashim, Md Roslan [1 ]
Pakhuruddin, Mohd Zamir [1 ,5 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Photovolta Mat & Devices, Minden 11800, Penang, Malaysia
[2] Koya Univ, Fac Sci & Hlth, Dept Phys, Koya KOY45, Kurdistan, Iraq
[3] Aligarh Muslim Univ, Univ Womens Polytech, Aligarh 202002, India
[4] Cihan Univ Erbil, Dept Biomed Sci, Erbil, Iraq
[5] Univ Sains Malaysia, Inst Nano Optoelect Res & Technol INOR, USM, Gelugor 11800, Penang, Malaysia
关键词
black silicon; flexible; Au plasmonic; back reflector; ABSORPTION; ULTRATHIN;
D O I
10.1088/1402-4896/ad7895
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this work, we investigate the effects of the different sizes of gold (Au) plasmonic nanoparticles (NPs) on the rear surface of flexible black silicon (b-Si) wafer. The flexible b-Si (65 mu m thickness) is fabricated by aluminum-assisted chemical etching (AACE) process, utilizing aluminum (Al) as the catalyst. After the b-Si fabrication, nanopores are produced on the flexible wafer surface. Then, gold nanoparticles (Au NPs) are spin-coated on the rear side of the flexible b-Si, followed by surface morphological and optical characterizations. The Au NPs with sizes of 24-92 nm have been deposited on the rear surface of the b-Si wafer. Based on the optical characterization, light absorbance increases above wavelength 800 nm due to enhanced light scattering by the Au NPs at the back surface. The average reflectance (Rave) is calculated in the 300 nm-1100 nm wavelength range for flexible crystalline silicon (c-Si) reference and compared with flexible b-Si surface and flexible b-Si/Au NPs. The lowest Rave of 15.4% is achieved for Au NPs with average size of 92 nm.
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页数:8
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