A Bi2C Photodetector Based on the Spin-Dependent Photogalvanic Effect

被引:0
|
作者
Lin, Jian [1 ]
Liang, Guangyao [1 ]
Fu, Xi [1 ,2 ]
Liao, Wenhu [1 ]
Li, Xiaowu [2 ]
Gao, Haixia [2 ]
机构
[1] Jishou Univ, Coll Phys & Mech & Elect Engn, Jishou 416000, Peoples R China
[2] Hunan Univ Sci & Engn, Coll Sci, Yongzhou 425199, Peoples R China
基金
中国国家自然科学基金; 湖南省自然科学基金;
关键词
First-principles calculation; photogalvanic effect; Bi2C monolayer; photodetector; MONOLAYER; GRAPHENE; SEMICONDUCTOR;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nowadays there is considerable interest in the photogalvanic effect in low-dimensional devices. In this work, we built a two-dimensional Bi2C-based photodetector and explored the spin-dependent photogalvanic effect under linearly polarized light and zero-bias conditions which can produce experimentally observable photoelectron flow. It was discovered that by introducing vacancies and substitution-doping into the Bi2C photodetector, the photogalvanic effect could be enhanced by 10-100 times that of a pristine photodetector, which is sufficient to be detected in experiments. Moreover, due to strong spin-orbit interactions, the Bi2C photodetector can produce very high spin polarization, even 100% full spin polarization, and pure spin current at a specific incident angle and photon energy, for example in the Bi1-vacancy Bi2C photodetector. In addition, the photon energy of incident light can regulate the produced spin photocurrent, which shows considerable anisotropy. Our results highlight the potential of the Bi2C photodetector as a versatile device in optoelectronics and spintronics applications. [GRAPHICS] .
引用
收藏
页码:3702 / 3712
页数:11
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