Effect of Modulation Period on the Thermally-Induced SolidState Reactions in Ni/Ti Thin Films

被引:1
|
作者
Kruhlov, I. O. [1 ]
Franchik, N. V. [1 ]
Voloshko, S. M. [1 ]
Orlov, A. K. [1 ]
机构
[1] Natl Tech Univ Ukraine, Igor Sikorsky Kyiv Polytech Inst, 37 Peremohy Ave, UA-03056 Kyiv, Ukraine
关键词
thin films; solid-state reactions; diffusion; crystal structure; amorphization; PHASE; NI; FABRICATION; DIFFUSION; TITANIUM; NICKEL;
D O I
10.15407/mfint.45.07.0843
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we have studied the structure evolution of Ni/Ti layered stacks with a modulation period of 30 nm and 15 nm (total thickness of the stack is of 60 nm) deposited by RF magnetron sputtering onto p-Si (001) substrate upon vacuum annealing up to 700 degrees C. As found based on the XRD, SIMS and four-point probe resistivity measurements' data, the diffusion-induced reactions in both stacks occur through the stages of metals' intermixing, amorphization and formation of intermetallic Ni x Ti phases. The application of a smaller modulation period leads to the more intense metals' intermixing, which results in the shift of the structural transitions onset to the lower temperatures. However, the modulation period does not influence the temperature range of amorphization, which is of congruent to 38 degrees C for both stacks.
引用
收藏
页码:843 / 856
页数:133
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