Role of bulk and surface current carriers in resistivity of thin films of the topological insulator Bi2Se3

被引：0

作者：

Perevalova, Alexandra N. ^{[1
]}

Fominykh, Bogdan M. ^{[1
]}

Chistyakov, Vasiliy V. ^{[1
]}

Marchenkov, Vyacheslav V. ^{[1
]}

机构：

[1] Russian Acad Sci, MN Mikheev Inst Met Phys, Ural Branch, Ekaterinburg 620108, Russia

来源：

NANOSYSTEMS-PHYSICS CHEMISTRY MATHEMATICS | 2024年 / 15卷 / 04期

关键词：

thin films; Bi2Se3; topological insulator; electrical resistivity; bulk and surface resistivities; SINGLE DIRAC CONE; MAGNETORESISTIVITY;

D O I：

10.17586/2220-8054-2024-15-4-465-468

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The temperature dependences of the electrical resistivity of topological insulator Bi2Se3 thin films with thicknesses of 20 and 40 nm were measured in the temperature range from 4.2 to 80 K. Their resistivity was shown to depend on thickness. A method was proposed for "separation" of the bulk and surface resistivity of films, with the help of which corresponding estimates were made. It was demonstrated that the surface resistivity is more than two orders of magnitude less than the bulk resistivity at T = 4.2 K.

引用

页码：465 / 468

页数：4

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