Selective-Area Epitaxy of Bulk-Insulating (Bi x Sb1-x )2Te3 Films and Nanowires by Molecular Beam Epitaxy

被引：0

作者：

Lippertz, Gertjan ^{[1
]}

Breunig, Oliver ^{[1
]}

Fister, Rafael ^{[1
]}

Uday, Anjana ^{[1
]}

Bliesener, Andrea ^{[1
]}

Brede, Jens ^{[1
]}

Taskin, Alexey ^{[1
]}

Ando, Yoichi ^{[1
]}

机构：

[1] Univ Cologne, Phys Inst 2, D-50937 Cologne, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2024年 / 16卷 / 31期

关键词：

topological insulator; nanowire; selective-areaepitaxy; Aharonov-Bohm oscillations; electrostaticgating; SURFACE; STATE;

D O I：

10.1021/acsami.4c06146

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a prepatterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the SAE technique. Their transport properties show that the quality of the selectively grown structures is comparable to that of bulk-insulating TI films grown on pristine substrates. In SAE-grown TI nanowires, we were able to observe Aharonov-Bohm-like magnetoresistance oscillations that are characteristic of the quantum-confined topological surface states. The availability of bulk-insulating TI nanostructures via the SAE technique opens the possibility to fabricate intricate topological devices in a scalable manner.

引用

页码：41293 / 41299

页数：7

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