Recent advances in InGaAs/InP single-photon detectors

被引：1
|
作者：
Yu, Chao [1 ,2 ,3 ]
Xu, Qi [1 ,2 ,3 ]
Zhang, Jun [1 ,2 ,3 ,4 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Sch Phys Sci, Hefei 230026, Peoples R China
[3] Univ Sci & Technol China, CAS Ctr Excellence Quantum Informat & Quantum Phys, Hefei 230026, Peoples R China
[4] Univ Sci & Technol China, Hefei Natl Lab, Hefei 230088, Peoples R China
来源：
MEASUREMENT SCIENCE AND TECHNOLOGY | 2024年 / 35卷 / 12期
基金：
中国国家自然科学基金;
关键词：
InGaAs/InP; single-photon detector; single-photon avalanche diode; near infrared; quantum communication; lidar; INP AVALANCHE PHOTODIODES; DESIGN CONSIDERATIONS; HIGH-SPEED; 1550; NM; PERFORMANCE; DIODE; CHARGE; LIDAR;
D O I：
10.1088/1361-6501/ad76ca
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single-photon detectors (SPDs) are widely used in applications requiring extremely weak light detection. In the near-infrared region, SPDs based on InGaAs/InP single-photon avalanche diodes (SPADs) are the primary candidates for practical applications because of their small size, low cost and ease of operation. Driven by the escalating demands for quantum communication and lidar, the performance of InGaAs/InP SPDs has been continuously enhanced. This paper provides a comprehensive review of advances in InGaAs/InP SPDs over the past 10 years, including the investigation into SPAD structures and mechanisms, as well as emerging readout techniques for both gated and free-running mode SPDs. In addition, future prospects are also summarised.
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收藏
页数：14
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