Dislocation pinning in helium-implanted tungsten: A molecular dynamics study

被引：2
作者：
Das, Suchandrima [1 ]
Sand, Andrea [2 ]
Hofmann, Felix [3 ]
机构：
[1] Univ Bristol, Dept Mech Engn, Bristol, England
[2] Aalto Univ, Dept Appl Phys, Espoo, Finland
[3] Univ Oxford, Dept Engn Sci, Oxford, England
来源：
JOURNAL OF NUCLEAR MATERIALS | 2024年 / 601卷
基金：
英国工程与自然科学研究理事会;
关键词：
Molecular dynamics; Micromechanics; Plasticity; Hardness; Helium-implanted tungsten; Dislocation mobility; RAY MICRO-DIFFRACTION; SCREW DISLOCATIONS; INTERSTITIAL LOOPS; DEFORMATION; DEFECTS; SIMULATION; VACANCIES; BEHAVIOR; ALLOYS; CLIMB;
D O I：
10.1016/j.jnucmat.2024.155293
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using molecular dynamics simulations, we investigate the interaction of edge dislocations with He-filled Frenkel pairs (He2V-SIA), the predominant defect type in helium-implanted tungsten. Clusters of 3-10 He2V-SIA are seen to be stable with their pinning strength increasing with size. For all cluster sizes, the dislocation bows around the cluster and unpins while carrying SIAs with it. The helium-vacancy complex and new vacancies left behind, have little pinning effect, explaining the "defect-clearing" and experimentally observed deformation softening. The predicted solute hardening for 3000 appm helium-induced defect distribution of varying sizes, is in excellent agreement with previous experimental observations.
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页数：12
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