Synthesis and Augmented Morphological and Optical Properties of Si3N4-TiN Inorganic Nanostructures Doped PVP for Promising Optoelectronics Applications

The current article objects to fabricate of PVP-Si3N4-Al2O3 nanostructures films as future nanomaterials and promising to utilize in the nanoelectronics and optics fields. The morphological and optical characteristics of PVP-Si3N4-Al2O3 nanostructures films were investigated. The optical characteristics results indicated to the absorption(A) rises with 57.8% at UV-region(lambda = 340 nm) while transmission decreases with 21.7% when the concentration rises from 12.5 gm/L to 50 gm/L, this performance can be functional in optical, solar collectors, anti-reflectance and semiconductors fields. The energy gap of PVP reduced from 3.05 eV to 2 eV when the concentration reached 50 gm/L which make the PVP-Si3N4-Al2O3 films appropriate in numerous nanoelectronics fields. The other optical parameters: refractive index, absorption coefficient, real and imaginary parts of dielectric constants, extinction coefficient and optical conductivity of PVP enhanced with an increase in the concentration. The results of thermal energy storage application showed to get on melting time gain reached 55.8% which makes the PVP-Si3N4-Al2O3-H2O nanofluids are appropriate in the thermal energy storage applications. Finally, the attained results demonstrated the PVP-Si3N4-Al2O3 nanostructures are important promising nano-materials to employ in solar collectors and various optics approaches with outstanding optical characteristics compared of other nanosystems.