High-Performance Self-Powered Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction with High Responsivity and Selectivity

被引：8
作者：
Woo, Sola [1 ]
Lee, Taeeun [1 ]
Song, Chang Woo [1 ]
Park, Jun Young [1 ]
Jung, Yusup [2 ]
Hong, Jeongsoo [3 ]
Kyoung, Sinsu [2 ]
机构：
[1] Pukyong Natl Univ, Dept Elect & Commun Engn, 45 Yongso-ro, Busan 48513, South Korea
[2] PowerCubeSemi Inc, 686 Cheonggyesan Ro, Seongnam Si 13105, South Korea
[3] Gachon Univ, Coll IT Convergence, Dept Elect Engn, 1342,Seongnam Daero, Seongnam Si 13120, Gyeonggi Do, South Korea
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2024年 / 221卷 / 18期
关键词：
deep ultraviolet; heterojunction; NiO/beta-Ga2O3; photodetector; post-annealing; ELECTRICAL-PROPERTIES; NIO; DIODES;
D O I：
10.1002/pssa.202400310
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A high-performance self-powered deep ultraviolet (DUV) photodetector based on the NiO/beta-Ga2O3 heterojunction is fabricated and analyzed. The NiO/beta-Ga2O3 heterojunction photodetectors are fabricated both with and without a post-annealing process following NiO film deposition. Each photodetector structure is investigated through technology computer-aided design simulations, including energy band diagram, trap density, and carrier concentration. The pristine self-powered NiO/beta-Ga2O3 photodetector, lacking a post-annealing process, exhibits partial Schottky contact formation between metal and NiO film, leading to performance degradation, including reduced responsivity, detectivity, and response time. On the other hand, the post-annealed self-powered NiO/beta-Ga2O3 photodetector demonstrates high performance such as a responsivity of 592.0 mA W-1, a detectivity of 4.30 x 10(12) Jones, and response times of 30.93 ms and 72.32 ms, respectively. Therefore, the fabricated NiO/beta-Ga2O3 photodetector shows a promising potential for various applications requiring DUV detection without an external voltage bias.
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页数：10
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