Effect of Thermal Annealing on Properties Ga2O3/GaAs:Cr Heterostructures

被引：0

作者：

Kalygina, V. M. ^{[1
]}

Kiseleva, O. S. ^{[1
]}

Kopyev, V. V. ^{[1
]}

Kushnarev, B. O. ^{[1
]}

Oleinik, V. L. ^{[1
]}

Petrova, Y. S. ^{[1
]}

Tsymbalov, A. V. ^{[1
]}

机构：

[1] Tomsk State Univ, Tomsk 634050, Russia

来源：

TECHNICAL PHYSICS | 2024年 / 69卷 / 06期

关键词：

dark current; photocurrent; UV radiation; Ga2O3/GaAs:Cr structures; autonomous operation mode; GAAS; PERFORMANCE;

D O I：

10.1134/S106378422406015X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data on the sensitivity of Ga2O3/GaAs:Cr heterostructures are presented to long-wave and UV (lambda = 254 nm) radiation. The samples were obtained by RF magnetron sputtering of a gallium oxide film on non-heated GaAs:Cr substrates. Gallium arsenide plates with a Ga2O3 film were divided into two parts: one half was not annealed, and the other was annealed in argon at 500 degrees C for 30 min. Regardless of the presence or absence of heat treatment, the studied structures exhibit a photovoltaic effect and are able to operate in an autonomous mode. It is shown that a noticeable sensitivity to long-wave radiation appears in the samples only after thermal annealing of gallium oxide films. The response and recovery times of such UV radiation detectors do not exceed 1 second.

引用

页码：1584 / 1589

页数：6

共 16 条

[11] Evaluation of band alignment of α-Ga2o3/α-(AlxGa1-x)2O3 heterostructures by X-ray photoelectron spectroscopy [J].