Effect of Thermal Annealing on Properties Ga2O3/GaAs:Cr Heterostructures

被引：0

作者：

Kalygina, V. M. ^{[1
]}

Kiseleva, O. S. ^{[1
]}

Kopyev, V. V. ^{[1
]}

Kushnarev, B. O. ^{[1
]}

Oleinik, V. L. ^{[1
]}

Petrova, Y. S. ^{[1
]}

Tsymbalov, A. V. ^{[1
]}

机构：

[1] Tomsk State Univ, Tomsk 634050, Russia

来源：

TECHNICAL PHYSICS | 2024年 / 69卷 / 06期

关键词：

dark current; photocurrent; UV radiation; Ga2O3/GaAs:Cr structures; autonomous operation mode; GAAS; PERFORMANCE;

D O I：

10.1134/S106378422406015X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data on the sensitivity of Ga2O3/GaAs:Cr heterostructures are presented to long-wave and UV (lambda = 254 nm) radiation. The samples were obtained by RF magnetron sputtering of a gallium oxide film on non-heated GaAs:Cr substrates. Gallium arsenide plates with a Ga2O3 film were divided into two parts: one half was not annealed, and the other was annealed in argon at 500 degrees C for 30 min. Regardless of the presence or absence of heat treatment, the studied structures exhibit a photovoltaic effect and are able to operate in an autonomous mode. It is shown that a noticeable sensitivity to long-wave radiation appears in the samples only after thermal annealing of gallium oxide films. The response and recovery times of such UV radiation detectors do not exceed 1 second.

引用

收藏

页码：1584 / 1589

页数：6

相关论文

共 16 条

[1] Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors [J].

Holland, M. ;

Stanley, C. R. ;

Reid, W. ;

Hill, R. J. W. ;

Moran, D. A. J. ;

Thayne, I. ;

Paterson, G. W. ;

Long, A. R. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (05) :1706-1710

[2] Novel Ga2O3(Gd2O3) passivation techniques to produce low D-it oxide-GaAs interfaces [J].

Hong, M ;

Mannaerts, JP ;

Bower, JE ;

Kwo, J ;

Passlack, M ;

Hwang, WY ;

Tu, LW .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :422-427

[3] Schottky barrier height and interfacial state density on oxide-GaAs interface [J].

Hwang, JS ;

Chang, CC ;

Chen, MF ;

Chen, CC ;

Lin, KI ;

Tang, FC ;

Hong, M ;

Kwo, J .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :348-353

[4]

Kalygina V. M., 2015, FTP, V49, P357

[5] Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application [J].

Li, Meng-Qiu ;

Yang, Ni ;

Wang, Gui-Gen ;

Zhang, Hua-Yu ;

Han, Jie-Cai .

APPLIED SURFACE SCIENCE, 2019, 471 :694-702

[6] Improving the production of high-performance solar-blind β-Ga2O3 photodetectors by controlling the growth pressure [J].

Li, Zhe ;

An, Zhiyuan ;

Xu, Yu ;

Cheng, Yaolin ;

Cheng, Ya'nan ;

Chen, Dazheng ;

Feng, Qian ;

Xu, Shengrui ;

Zhang, Jincheng ;

Zhang, Chunfu ;

Hao, Yue .

JOURNAL OF MATERIALS SCIENCE, 2019, 54 (14) :10335-10345

[7] Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen Pressures [J].

Huang, Lu ;

Feng, Qian ;

Han, Genquan ;

Li, Fuguo ;

Li, Xiang ;

Fang, Liwei ;

Xing, Xiangyu ;

Zhang, Jincheng ;

Hao, Yue .

IEEE Photonics Journal, 2017, 9 (04)

[8] Characterization of Sn-doped β-Ga2O3 films deposited on MgO (100) substrate by MOCVD [J].

Mi, Wei ;

Ma, Jin ;

Li, Zhao ;

Luan, Caina ;

Xiao, Hongdi .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (10) :7889-7894

[9] Review of deep ultraviolet photodetector based on gallium oxide [J].

Qin, Yuan ;

Long, Shibing ;

Dong, Hang ;

He, Qiming ;

Jian, Guangzhong ;

Zhang, Ying ;

Hou, Xiaohu ;

Tan, Pengju ;

Zhang, Zhongfang ;

Lv, Hangbing ;

Liu, Qi ;

Liu, Ming .

CHINESE PHYSICS B, 2019, 28 (01)

[10] Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films [J].

Tak, Bhera Ram ;

Yang, Ming-Min ;

Alexe, Marin ;

Singh, Rajendra .

CRYSTALS, 2021, 11 (09)