Sensing with extended gate negative capacitance ferroelectric field-effect transistors

With major signal analytical elements situated away from the measurement environment, extended gate (EG) ion-sensitive fi eld- effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. In this work, a highly sensitive and power-ef fi cient ISFET was proposed based on a metal - ferroelectric - insulator gate stack with negative capacitance - induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected EG electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.