Investigating the Z-scheme mechanism on the optimized oxygen vacancies ZnO/Co3S4 photocatalyst for the efficient photocatalytic removal of ciprofloxacin

被引:1
|
作者
Mousavi, Mitra [1 ]
Ghasemi, Jahan B. [1 ]
Shekofteh-Gohari, Maryam [1 ]
Habibi, Mohammad Mehdi [1 ]
机构
[1] Univ Tehran, Univ Coll Sci, Sch Chem, POB 141556455, Tehran, Iran
基金
美国国家科学基金会;
关键词
CIP; ZnO; Oxygen vacancy; Co3S4; Photocatalysis; Z-scheme; HETEROJUNCTION PHOTOCATALYST; ORGANIC-DYES; DEGRADATION; FABRICATION; NANOSHEETS; PERFORMANCE; COMPOSITE; HETEROSTRUCTURE; ANTIBIOTICS; REDUCTION;
D O I
10.1016/j.jpcs.2024.112251
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The waste of human and animal antibiotics is an inescapable problem and a severe threat to the continuation of human life. A logical strategy to face the challenge of antibiotic contamination is to design active, stable, environmentally friendly, and economical photocatalysts. Hence, oxygen vacancies ZnO/Co3S4 (ZnO-OV/Co3S4) photocatalyst was successfully fabricated for the first time and used for the photocatalytic removal of ciprofloxacin (CIP) as a widely used antibiotic under visible light. Several techniques were engaged in exploring the crystallinity, morphology, structure, chemical and elemental composition, and electrochemical and optical properties of the constructed nanocomposites. The band gap of ZnO-OV and Co3S4 nanoparticles was determined at 2.95 and 1.58 eV by evaluating the optical properties and using the Tauc plots. To optimize the conditions of the photocatalytic process, factors such as the weight percentage of the nanocomposite components, the photocatalyst dosage, the initial concentration of CIP, the pH of the test solution, and the presence of bubbled oxygen were varied. The optimal degradation rate constant (0.0720 min(-1)) was obtained for ZnO-OV/Co3S4 (15 %) nanocomposite at pH 9, nanocomposite dosage of 1.5 g/L, and 10 mg/L of CIP in the visible spectrum. The experimental and characterization outcomes indicated that the significantly boosted photocatalytic activity of the ZnO-OV/Co3S4 composite was chiefly attributed to the oxygen vacancies, retard charge carriers recombination by the construction of heterojunction between the ZnO-OV and Co3S4. Finally, the possible Z-scheme mechanism was proposed to illuminate the migration of charge carriers.
引用
收藏
页数:15
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