The Design of Two-Stage RF Power Amplifier

被引：0

作者：

Cui, Yanni ^{[1
]}

Duan, Lei ^{[1
]}

Zhao, Hongying ^{[1
]}

Wang, Guangtao ^{[1
]}

机构：

[1] Yunnan Univ, Sch Informat Sci & Engn, Kunming 650091, Peoples R China

来源：

15TH CONFERENCE ON THE WIRELESS ACROSS THE TAIWAN STRAITS, PROCEEDINGS | 2010年

关键词：

TD-LTE; Power Amplifier; Match; Load-Pull;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A RF power amplifier based on TD-LTE system has been designed in Advanced Design System(ADS). The center frequency of this RF power amplifier is 2350MHz, the Gain between 2300MHz and 2400MHz is up to 28dB, and the Efficiency is up to 33%, Non-linearity and Stability of single-carrier two-stage power amplifier are also well for the system. According to the procedure of the RF power amplifier, based on the design requirement to select the design kit. Then the Q-point is selected to design the bias network and analyze the stability of the network. At last through the analysis of the [S] parameter, the input and output match circuit is designed. The design requirement of the power amplifier is simulated and optimized with ADS and a single-carrier of two-stage RF power amplifier based on TD-LTE system is well designed.

引用

页码：161 / 166

页数：6