Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier

被引:1
|
作者
Wu, Zhijun [1 ]
Duan, Tianpeng [1 ]
Tian, Zhihong [1 ]
Jiang, Yongheng [1 ]
Zhou, Yichun [1 ]
Jiang, Jie [1 ]
Yang, Qiong [1 ]
机构
[1] Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China
基金
中国国家自然科学基金;
关键词
ELECTRORESISTANCE; HFO2; PHASE;
D O I
10.1063/5.0216890
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ferroelectric tunnel junction (FTJ), which possesses a simple structure, low power consumption, high operation speed, and nondestructive reading, has attracted great attention for the application of next-generation nonvolatile memory. The complementary metal-oxide-semiconductor-compatible hafnium oxide (HfO2) ferroelectric thin film found in the recent decade is promising for the scalability and industrialization of FTJs. However, the electric performance, such as the tunneling electroresistance (TER) effect, of the current HfO2-based FTJs is not very satisfactory. In this work, we propose a type of high-performance HfO2-based FTJ by utilizing a ferroelectric/dielectric composite barrier strategy. Using density functional theory calculations, we study the electronic and transport properties of the designed Ni/HfO2/MgS/Ni (001) FTJ and demonstrate that the introduction of an ultra-thin non-polar MgS layer facilitates the ferroelectric control of effective potential barrier thickness and leads to a significant TER effect. The OFF/ON resistance ratio of the designed FTJ is found to exceed 4 x 10(3) based on the transmission calculation. Such an enhanced performance is driven by the resonant tunneling effect of the ON state, which significantly increases transmission across the FTJ when the ferroelectric polarization of HfO2 is pointing to the non-polar layer due to the aroused electron accumulation at the HfO2/MgS interface. Our results provide significant insight for the understanding and development of the FTJs based on the HfO2 ferroelectric/non-polar composite barrier.
引用
收藏
页数:5
相关论文
共 50 条
  • [31] Ultrathin BaTiO3-Based Ferroelectric Tunnel Junctions through Interface Engineering
    Li, Changjian
    Huang, Lisen
    Li, Tao
    Lu, Weiming
    Qiu, Xuepeng
    Huang, Zhen
    Liu, Zhiqi
    Zeng, Shengwei
    Guo, Rui
    Zhao, Yonglian
    Zeng, Kaiyang
    Coey, Michael
    Chen, Jingsheng
    Ariando
    Venkatesan, T.
    NANO LETTERS, 2015, 15 (04) : 2568 - 2573
  • [32] Large magnetoelectric effect in organic ferroelectric copolymer-based multiferroic tunnel junctions
    Subedi, Ram Chandra
    Geng, Rugang
    Luong, Hoang Mai
    Huang, Weichuan
    Li, Xiaoguang
    Hornak, Lawrence A.
    Tho Duc Nguyen
    APPLIED PHYSICS LETTERS, 2017, 110 (05)
  • [33] NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films
    Molina-Reyes, Joel
    Hoshii, Takuya
    Ohmi, Shun-Ichiro
    Funakubo, Hiroshi
    Hori, Atsushi
    ujiwaral, Ichiro
    Wakabayashi, Hitoshi
    Tsutsui, Kazuo
    Kakushima, Kuniyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (59)
  • [34] Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
    Lee, Tae Yoon
    Lee, Kyoungjun
    Lim, Hong Heon
    Song, Myeong Seop
    Yang, Sang Mo
    Yoo, Hyang Keun
    Suh, Dong Ik
    Zhu, Zhongwei
    Yoon, Alexander
    MacDonald, Matthew R.
    Lei, Xinjian
    Jeong, Hu Young
    Lee, Donghoon
    Park, Kunwoo
    Park, Jungwon
    Chae, Seung Chul
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (03) : 3142 - 3149
  • [35] Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2
    Wei, Wei
    Zhao, Guoqing
    Zhan, XuePeng
    Zhang, Weiqiang
    Sang, Pengpeng
    Wang, Qianwen
    Tai, Lu
    Luo, Qing
    Li, Yuan
    Li, Can
    Chen, Jiezhi
    JOURNAL OF APPLIED PHYSICS, 2022, 131 (15)
  • [36] Controlling ferroelectric properties in Y-doped HfO2 thin films by precise introduction of oxygen vacancies
    Dmitriyeva, Anna V.
    Zarubin, Sergei S.
    Konashuk, Aleksei S.
    Kasatikov, Sergey A.
    Popov, Victor V.
    Zenkevich, Andrei V.
    JOURNAL OF APPLIED PHYSICS, 2023, 133 (05)
  • [37] Nanoscale ferroelectric tunnel junctions based on ultrathin BaTiO3 film and Ag nanoelectrodes
    Gao, X. S.
    Liu, J. M.
    Au, K.
    Dai, J. Y.
    APPLIED PHYSICS LETTERS, 2012, 101 (14)
  • [38] Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions
    Yan, Z. B.
    Yau, H. M.
    Li, Z. W.
    Gao, X. S.
    Dai, J. Y.
    Liu, J. -M.
    APPLIED PHYSICS LETTERS, 2016, 109 (05)
  • [39] Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films
    Kondo, Shinya
    Shimura, Reijiro
    Teranishi, Takashi
    Kishimoto, Akira
    Nagasaki, Takanori
    Funakubo, Hiroshi
    Yamada, Tomoaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (SF)
  • [40] Online and offline learning using fading memory functions in HfSiOx-based ferroelectric tunnel junctions
    Lee, Jungwoo
    Youn, Chaewon
    Heo, Jungang
    Kim, Sungjun
    JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (43) : 17362 - 17376