Improving Short-Circuit Withstand Capability by Targeted Optimization Package for Press-Pack IGBT Module

被引：0
|
作者：
Liu, Renkuan [1 ]
Li, Hui [2 ]
Luo, Xiaorong [1 ,3 ]
Yao, Ran [2 ]
Lai, Wei [2 ]
Wei, Jie [1 ]
Wang, Xiao [4 ]
Li, Zhaoji [1 ]
Zhang, Bo [1 ]
Chen, Xianping [4 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
[2] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Sec, Chongqing 400044, Peoples R China
[3] Chengdu Univ Informat Technol, Coll Microelect, Chengdu 610225, Peoples R China
[4] Chongqing Pingchuang Inst Semicond Co Ltd, Chongqing 402760, Peoples R China
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2024年 / 39卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Package; press-pack insulated gate bipolar transistor (PP-IGBT); reliability; short-circuit withstand capability (SCWC); targeted optimization;
D O I：
10.1109/TPEL.2024.3431077
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, an electrical-thermal-mechanical (ETM) multiphysics transient finite-element (FE) model is proposed for the press-pack insulated gate bipolar transistor (PP-IGBT) module, and a targeted optimization package (TOP) is designed to enhance the short-circuit withstand capability (SCWC). First, an ETM transient FE model is proposed based on a 3.3-kV/ 50-A PP-IGBT and the coupling relation among electrical, thermal, and mechanical. The weak part of the SCWC is identified by combining the test with the simulation of the short-circuit transient process. Second, the pattern and dimension parameters of TOP are investigated to realize the best performance. Then, its SCWC improvement and reliability are verified through the SCWC, blocking voltage, and power cycling test. The SCWC of the TOP PP-IGBT has increased by over 100% compared to that of the conventional PP-IGBT.
引用
收藏
页码：12534 / 12541
页数：8
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