COMPARISON OF 2D AND 3D P-N JUNCTION DIFFERENTIAL CONDUCTANCE AND DIFFUSION CAPACITANCE

被引：1
作者：
Dadamirzaev, Muhammadjon G. [1 ]
Kosimova, Mamura O. [1 ]
Boydedayev, S. R. [1 ]
Makhmudov, Azamat S. [1 ]
机构：
[1] Namangan Engn Construct Inst, Namangan 160103, Uzbekistan
来源：
EAST EUROPEAN JOURNAL OF PHYSICS | 2024年 / 02期
关键词：
p-n-junction; Diffusion capacitance; Differential conductance; Microwave field; 2D dimensional materials; PHOTOCURRENT GENERATION; ENERGY-CONVERSION; DIODES;
D O I：
10.26565/2312-4334-2024-2-46
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In the fabrication of 3D p-n junctions, doping or surface modification caused by ion injection changes the electrical properties and crystal structure of the semiconductor. In addition, as the size of the semiconductor device decreases, various quantum effects are gradually appearing in them. This shows that the scope of application of classical device theory is now limited. In recent years, two-dimensional (2D) materials with amazing atomically fine properties have attracted great interest. The electrostatic field properties of some 2D p-n junctions, such as WS2, MoS2, MoSe2, WSe2, and black phosphorus (BP), open the door to new possibilities for semiconductors. Changes in the diffusion capacitances and differential conductance's of 2D p-n junctions under the influence of an microwave field, and the diffusion capacitances and differential conductance's of 2D and 3D p-n junctions the change of conductivities under the influence of microwave field is compared.
引用
收藏
页码：372 / 379
页数：8
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