High carrier mobility and polarization sensitivity of AlN/Hf2CO2 heterojunction photodetector

被引：38

作者：

Cui, Zhen ^{[1
,2
]}

Gao, Xin ^{[1
]}

Zhang, Shuang ^{[1
]}

Wang, Lu ^{[1
]}

机构：

[1] Xian Univ Technol, Sch Automat & Informat Engn, Xian 710048, Peoples R China

[2] Xian Univ Technol, Xian Key Lab Wireless Opt Commun & Network Res, Xian 710048, Peoples R China

来源：

CHINESE JOURNAL OF PHYSICS | 2024年 / 91卷

基金：

中国国家自然科学基金;

关键词：

Van der Waals heterojunction; Carrier mobility; Light absorption coefficient; Photogalvanic effect; First principles; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; 1ST-PRINCIPLES; MXENE; PERFORMANCE; GRAPHENE;

D O I：

10.1016/j.cjph.2024.07.046

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper utilizes density functional theory to investigate the structural stability, electronic, optical properties, and photogalvanic effect of the AlN/Hf2CO2 heterojunction. The high stability of the AlN/Hf2CO2 heterojunction is confirmed by calculating the formation energy and performing ab initio molecular dynamics simulations. Demonstrating a type II heterojunction, characterized by an indirect band-gap semiconductor, the heterostructure exhibits a bandgap of 1.518 eV. In the zigzag and armchair directions, the hole mobility of the AlN/Hf2CO2 heterojunction stands at 16835 cm2/Vs and 4209 cm2/Vs, indicating strong electrical conductivity. Compared to monolayer materials, the AlN/Hf2CO2 heterojunction exhibits enhanced light absorption in the ultraviolet and visible light ranges, with a peak absorption at 223 nm reaching a value of 7.62 x 10-5 cm-1. In the zigzag direction, a sensitivity of 27 can be attained by the photogalvanic effect. There is a certain degree of application value in the field of photodetectors.

引用

页码：421 / 431

页数：11

共 65 条

[11] Adsorption of metal atoms on MoSi2N4 monolayer: A first principles study [J].

Cui, Zhen ;

Yang, Kunqi ;

Ren, Kai ;

Zhang, Shuang ;

Wang, Lu .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 152

[12] Structures and Mechanical and Electronic Properties of the Ti2CO2 MXene Incorporated with Neighboring Elements (Sc, V, B and N) [J].

Feng, Li ;

Zha, Xian-Hu ;

Luo, Kan ;

Huang, Qing ;

He, Jian ;

Liu, Yijun ;

Deng, Wei ;

Du, Shiyu .

JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (04) :2460-2466

[13] Thermoelectric Performance of the MXenes M2CO2 (M = Ti, Zr, or Hf) [J].

Gandi, Appala Naidu ;

Alshareef, Husam N. ;

Schwingenschloegl, Udo .

CHEMISTRY OF MATERIALS, 2016, 28 (06) :1647-1652

[14] Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells [J].

Ganichev, SD ;

Ketterl, H ;

Prettl, W ;

Ivchenko, EL ;

Vorobjev, LE .

APPLIED PHYSICS LETTERS, 2000, 77 (20) :3146-3148

[15] Two-dimensional scandium-based carbides (MXene): Band gap modulation and optical properties [J].

Guo, Jianxin ;

Sun, Yong ;

Liu, Baozhong ;

Zhang, Qingrui ;

Peng, Qiuming .

JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 712 :752-759

[16] Ti2CO2 Nanotubes with Negative Strain Energies and Tunable Band Gaps Predicted from First-Principles Calculations [J].

Guo, Xun ;

Zhang, Ping ;

Xue, Jianming .

JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2016, 7 (24) :5280-5284

[17] Nonequilibrium photocurrent modeling in resonant tunneling photodetectors [J].

Henrickson, LE .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) :6273-6281

[18] Carbon vacancies in Ti2CT2 MXenes: defects or a new opportunity? [J].

Hu, Tao ;

Yang, Jinxing ;

Wang, Xiaohui .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (47) :31773-31780

[19] The structure and electronic properties of crimson phosphorus [J].

Huang, Hongyang ;

Zhang, Lihui ;

Xiao, Bing ;

Cheng, Yonghong ;

Zhang, Jinying .

APPLIED PHYSICS LETTERS, 2019, 115 (16)

[20] Gallium nitride nanowire nanodevices [J].

Huang, Y ;

Duan, XF ;

Cui, Y ;

Lieber, CM .

NANO LETTERS, 2002, 2 (02) :101-104

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