Electro-optic effect in thin film strontium barium niobate (SBN) grown by RF magnetron sputtering on SrTiO3 substrates

被引:1
|
作者
Christensen, Adam [1 ]
Reynaud, Marc [1 ]
Posadas, Agham B. [1 ]
Zhan, Xun [2 ]
Warner, Jamie H. [2 ,3 ]
Demkov, Alexander A. [1 ]
机构
[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
[2] Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 USA
[3] Univ Texas Austin, Walker Dept Mech Engn, Austin, TX 78712 USA
关键词
COEFFICIENTS; DEPOSITION;
D O I
10.1063/5.0206229
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric strontium barium niobate (SrxBa1-xNb2O6 or SBN) is a material with high electro-optic (EO) response. It is currently of interest in low voltage silicon-integrated photonics (SiPh). We have grown strongly textured SBN films with x = 0.65 by radio frequency sputtering on (100)-oriented SrTiO3 substrates where grains with mixed (310) and (001) out-of-plane orientation form. For these mixed orientation films, we observed a maximum effective EO coefficient of 230 pm/V using a transmission EO measurement geometry that is responsive only to the in-plane polarization component coming from the (310)-oriented grains. We also demonstrate that by growing SBN on TiO2-terminated SrTiO3 substrates, we can obtain predominantly (001)-oriented SBN films with out-of-plane polarization. Transmission EO measurements on such (001)-oriented films show a reduced effective Pockels coefficient of 88 pm/V, which is consistent with the overall ferroelectric polarization becoming out-of-plane. This work shows that controlling substrate termination is effective in controlling the grain orientation of SBN films grown on top and that one can readily integrate SBN films on SrTiO3-buffered Si for use in SiPh.
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页数:12
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