Delafossite NaYTe2 as a transparent conductive material with bipolar conductivity: A first-principles prediction

被引:1
作者
Zhang, Xiaotian [1 ]
Lin, Changqing [1 ]
Guo, Xinyi [1 ]
Xue, Yang [1 ]
Liang, Xianqing [1 ]
Zhou, Wenzheng [1 ]
Persson, Clas [4 ,5 ,6 ]
Huang, Dan [1 ,2 ,3 ]
机构
[1] Guangxi Univ, Guangxi Novel Battery Mat Res Ctr Engn Technol, Sch Phys Sci & Technol, State Key Lab Featured Met Mat & Life Cycle Safety, Nanning 530004, Peoples R China
[2] Guilin Univ Elect Technol, Guangxi Key Lab Precis Nav Technol & Applicat, Guilin 541004, Peoples R China
[3] Guangxi Univ, Sch Chem & Chem Engn, Guangxi Key Lab Electrochem Energy Mat, Nanning 530004, Peoples R China
[4] KTH Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
[5] Univ Oslo, Dept Phys, NO-0316 Oslo, Norway
[6] Univ Oslo, Ctr Mat Sci & Nanotechnol, NO-0316 Oslo, Norway
基金
中国国家自然科学基金;
关键词
Bipolar conductivity; Transparent conductive material; First-principles calculations; Defect; Electronic structure; ELECTRICAL-CONDUCTION; MOLECULAR-DYNAMICS; DESIGN PRINCIPLES; THIN-FILMS; OXIDE; CUINO2; SEMICONDUCTORS; FABRICATION;
D O I
10.1016/j.jpcs.2024.112002
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Doping asymmetry is a long-standing issue for the progress of wide-bandgap semiconductors, including also several transparent conductors. However, a few compounds exhibit bipolar conductivity, implying a desired band gap in combination with proper energy positions of the band edges according to the empirical doping limit rule. The present first-principles study of delafossite NaYTe2 reveals that the compound is thermodynamic stable with an optical gap energy of similar to 3.0 eV and an ionization potential of 6.2 eV, and the electronic structure is thus in the range for realizing bipolar character as a transparent conductive material. In addition, the analysis of the defect properties strengthens this prediction, especially for high free carrier concentration in NaYTe2, obtained by either extrinsic doping or intrinsic defects under suitable growth conditions.
引用
收藏
页数:8
相关论文
共 60 条
  • [1] PLD of transparent and conductive AZO thin films
    Anyanwu, V. O.
    Moodley, M. K.
    [J]. CERAMICS INTERNATIONAL, 2023, 49 (03) : 5311 - 5318
  • [2] Chemical Design and Example of Transparent Bipolar Semiconductors
    Arai, Takeshi
    Iimura, Soshi
    Kim, Junghwan
    Toda, Yoshitake
    Ueda, Shigenori
    Hosono, Hideo
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2017, 139 (47) : 17175 - 17180
  • [3] Structural, electronic and optical properties of ABTe2(A = Li, Na, K, Rb, Cs and B = Sc, Y, La): Insights from first-principles computations
    Azzouz, L.
    Halit, M.
    Rerat, M.
    Khenata, R.
    Singh, Ajaya K.
    Obeid, M. M.
    Jappor, Hamad R.
    Wang, Xiaotian
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 2019, 279
  • [4] BORN-OPPENHEIMER MOLECULAR-DYNAMICS SIMULATIONS OF FINITE SYSTEMS - STRUCTURE AND DYNAMICS OF (H2O)2
    BARNETT, RN
    LANDMAN, U
    [J]. PHYSICAL REVIEW B, 1993, 48 (04) : 2081 - 2097
  • [5] Equilibrium point defect and charge carrier concentrations in a material determined through calculation of the self-consistent Fermi energy
    Buckeridge, J.
    [J]. COMPUTER PHYSICS COMMUNICATIONS, 2019, 244 : 329 - 342
  • [6] Perspective on the band structure engineering and doping control of transparent conducting materials
    Cai, Xuefen
    Wei, Su-Huai
    [J]. APPLIED PHYSICS LETTERS, 2021, 119 (07)
  • [7] Design Principles of p-Type Transparent Conductive Materials
    Cao, Ruyue
    Deng, Hui-Xiong
    Luo, Jun-Wei
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (28) : 24837 - 24849
  • [8] Band-edge density-of-states and carrier concentrations in intrinsic and p-type CuIn1-xGaxSe2
    Chen, Rongzhen
    Persson, Clas
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (10)
  • [9] Electronic structure and stability of quaternary chalcogenide semiconductors derived from cation cross-substitution of II-VI and I-III-VI2 compounds
    Chen, Shiyou
    Gong, X. G.
    Walsh, Aron
    Wei, Su-Huai
    [J]. PHYSICAL REVIEW B, 2009, 79 (16)
  • [10] Preparation of p-type conductive transparent CuCrO2:Mg thin films by chemical solution deposition with two-step annealing
    Chiu, Te-Wei
    Tsai, Shao-Wei
    Wang, Yung-Po
    Hsu, Kai-Hung
    [J]. CERAMICS INTERNATIONAL, 2012, 38 : S673 - S676