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Influence of synergistic effect on the structure and dielectric property of La2(TiZrSnHfGe)2O7 high entropy oxides
被引:2
|作者:
Chen, Yaxuan
[1
]
Zhou, Shangxian
[1
,2
]
Li, Jinsheng
[1
,2
]
Li, Shuning
[1
,2
]
Zhao, Huanyu
[2
,3
]
Zhang, Mengwen
[4
]
Li, Pengfei
[1
,2
]
Qi, Xiwei
[2
,5
]
机构:
[1] Northeastern Univ, Inst Ceram & Powder Met, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China
[2] Northeastern Univ Qinhuangdao, Key Lab Dielect & Electrolyte Funct Mat Hebei Prov, Sch Resources & Mat, Qinhuangdao 066004, Peoples R China
[3] Shenyang Univ Chem Technol, Sch Mat Sci & Engn, Shenyang 110142, Peoples R China
[4] Zhengzhou Univ Aeronaut, Henan Key Lab Aeronaut Mat & Applicat Technol, Zhengzhou 450046, Henan, Peoples R China
[5] North China Univ Sci & Technol, Coll Met & Energy, Tangshan 063210, Peoples R China
基金:
中国国家自然科学基金;
关键词:
High entropy oxides;
Pyrochlore structure;
Dielectric properties;
CERAMICS;
CONDUCTIVITY;
EFFICIENT;
FLUORITE;
ALLOYS;
ENERGY;
D O I:
10.1016/j.ceramint.2024.07.327
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
In this study, La2(TiZrSnHfGe)2O7 high entropy oxides were firstly prepared by solid state reaction method. The effects of different sintering temperatures on the structure, morphology and dielectric properties were studied. When the pre-calcination temperature is 1300 degrees C, the powder exhibits a single pyrochlore phase instead of defective fluorite phase. The existence of high entropy affects the changes in the crystal structure of A2B2O7 type oxides, resulting in lattice distortion. The dielectric results showed that the ceramics have certain frequency dispersion, and the dielectric properties are affected by temperature and frequency. Due to the high entropy effect, the La2(TiZrSnHfGe)2O7 ceramic exhibits good dielectric stability at both high and low frequencies. The formation of defect dipole clusters in the system results in the increase of dielectric constant. It is feasible to change the dielectric properties of ceramics by designing high entropy oxides, which showed the potential value in microelectronics field.
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页码:39493 / 39503
页数:11
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