ELECTRODIFUSION OF MANGANESE ATOMS IN SILICON

The paper describes the research and study of the process of electrically induced diffusion of Mn atoms in silicon directly from a Si surface layer that was preliminarily enriched with Mn. To ensure the so-called electrically induced diffusion process, a constant electric field was applied to the investigated samples. It has been revealed that as a result of the diffusion of Mn impurity atoms into samples placed at the negative pole of the electrical diffusion unit, the proportion of Mn atoms was 75.4% (relative to silicon atoms), while in samples placed at the positive pole this indicator tended to be 2.7% (relative to silicon atoms). Besides that, for the first time, an experimental increase in the electro-active concentration of Mn impurity atoms in silicon (at T = 900 degrees C) was detected under the influence of an external constant-value electric field. In this case, the maximum solubility of impurity atoms of Mn at a temperature of T = 900 degrees C was N-Mn similar to 2.27 center dot 10(14) cm(-3), while the average concentration of electro-active Mn atoms diffused into silicon under the influence of an external constant electric field reached N-Mn*similar to 2.62 center dot 1014 cm(-3).