Harnessing two-dimensional electron gas in oxide heterostructures for integrated neuromorphic architecture and logic operations on a single chip

被引:0
|
作者
Gupta, Anshu [1 ]
Vashist, Amit [1 ]
Chakraverty, Suvankar [1 ]
机构
[1] Inst Nano Sci & Technol, Quantum Mat & Devices Unit, Mohali, India
关键词
ARTIFICIAL SYNAPSE; MEMRISTOR; SUPERCONDUCTIVITY; INTERFACE; DEVICE;
D O I
10.1063/5.0219906
中图分类号
O59 [应用物理学];
学科分类号
摘要
Neuromorphic electronics, inspired by the complexity of the biological brain, hold promise for revolutionizing information technology by enabling more efficient computing paradigms. Here, we report the potential of oxide heterostructure materials as building blocks for synapses in neuromorphic computer networks. Our approach involves utilizing two-dimensional electron gas (2DEG) within the oxide heterostructure EuO-KTaO3 (KTO), which exhibits optoelectronic properties essential for emulating key cognitive functions such as sensory perception, learning, and memory. The 2DEG at the EuO-KTO interface demonstrates the ability to switch from volatile to nonvolatile resistive states as the gate voltage sweeps using an optical signal as stimuli, unlike memristors using compliance current. Our single device not only accurately replicates the short- and long-term plasticity seen in biological synapses but also performs logic gate operations, enhancing its versatility and functionality.
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页数:7
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