Harnessing two-dimensional electron gas in oxide heterostructures for integrated neuromorphic architecture and logic operations on a single chip

被引:0
|
作者
Gupta, Anshu [1 ]
Vashist, Amit [1 ]
Chakraverty, Suvankar [1 ]
机构
[1] Inst Nano Sci & Technol, Quantum Mat & Devices Unit, Mohali, India
关键词
ARTIFICIAL SYNAPSE; MEMRISTOR; SUPERCONDUCTIVITY; INTERFACE; DEVICE;
D O I
10.1063/5.0219906
中图分类号
O59 [应用物理学];
学科分类号
摘要
Neuromorphic electronics, inspired by the complexity of the biological brain, hold promise for revolutionizing information technology by enabling more efficient computing paradigms. Here, we report the potential of oxide heterostructure materials as building blocks for synapses in neuromorphic computer networks. Our approach involves utilizing two-dimensional electron gas (2DEG) within the oxide heterostructure EuO-KTaO3 (KTO), which exhibits optoelectronic properties essential for emulating key cognitive functions such as sensory perception, learning, and memory. The 2DEG at the EuO-KTO interface demonstrates the ability to switch from volatile to nonvolatile resistive states as the gate voltage sweeps using an optical signal as stimuli, unlike memristors using compliance current. Our single device not only accurately replicates the short- and long-term plasticity seen in biological synapses but also performs logic gate operations, enhancing its versatility and functionality.
引用
收藏
页数:7
相关论文
共 33 条
  • [21] Palladium Nanoparticle Enhanced Giant Photoresponse at LaAl3/SrTiO3 Two-Dimensional Electron Gas Heterostructures
    Chan, Ngai Yui
    Zhao, Meng
    Wang, Ning
    Au, Kit
    Wang, Juan
    Chan, Lai Wa Helen
    Dai, Jiyan
    ACS NANO, 2013, 7 (10) : 8673 - 8679
  • [22] High-mobility two-dimensional electron gas in γ-Al2O3/SrTiO3 heterostructures
    Chen, Xiang-Hong
    Hu, Zhi-Xin
    Gao, Kuang-Hong
    Li, Zhi-Qing
    PHYSICAL REVIEW B, 2022, 105 (20)
  • [23] Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
    Ma, H. J. Harsan
    Zeng, S. W.
    Annadi, A.
    Huang, Z.
    Venkatesan, T.
    Ariando
    AIP ADVANCES, 2015, 5 (08):
  • [24] Multiorbital structure of the two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures: The formation of a dxy ferromagnetic sheet
    Li, Jichao C.
    Ignacio Beltran, Juan
    Carmen Munoz, M.
    PHYSICAL REVIEW B, 2013, 87 (07)
  • [25] Resistively detected nuclear magnetic resonance via a single InSb two-dimensional electron gas at high temperature
    Yang, K. F.
    Liu, H. W.
    Nagase, K.
    Mishima, T. D.
    Santos, M. B.
    Hirayama, Y.
    APPLIED PHYSICS LETTERS, 2011, 98 (14)
  • [26] Creating Two-Dimensional Electron Gas in Polar/Polar Perovskite Oxide Heterostructures: First-Principles Characterization of LaAIO3/A+B5+O3
    Wang, Yaqin
    Tang, Wu
    Cheng, Jianli
    Behtash, Maziar
    Yang, Kesong
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (21) : 13659 - 13668
  • [27] A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
    Feng, Zexin
    Qin, Peixin
    Yang, Yali
    Yan, Han
    Guo, Huixin
    Wang, Xiaoning
    Zhou, Xiaorong
    Han, Yuyan
    Yi, Jiabao
    Qi, Dongchen
    Yu, Xiaojiang
    Breese, Mark B. H.
    Zhang, Xin
    Wu, Haojiang
    Chen, Hongyu
    Xiang, Hongjun
    Jiang, Chengbao
    Liu, Zhiqi
    ACTA MATERIALIA, 2021, 204
  • [28] Spin responses and effective Hamiltonian for the two-dimensional electron gas at the oxide interface LaAlO3/SrTiO3
    Zhou, Jianhui
    Shan, Wen-Yu
    Xiao, Di
    PHYSICAL REVIEW B, 2015, 91 (24):
  • [29] High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO3/SrTiO3 (110) heterostructures
    Wang, Zhao-Cai
    Li, Zheng-Nan
    Li, Shuang-Shuang
    Zhao, Weiyao
    Zheng, Ren-Kui
    FRONTIERS OF PHYSICS, 2024, 19 (05)
  • [30] Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures-Experimental evidence of the hole trap state
    Lingaparthi, R.
    Dharmarasu, N.
    Radhakrishnan, K.
    Huo, Lili
    APPLIED PHYSICS LETTERS, 2023, 123 (09)