Near Room Temperature Solvothermal Growth of Ferroelectric CsPbBr3 Nanoplatelets with Ultralow Dark Current

被引:2
作者
Anilkumar, Gokul M. [1 ]
Bhakar, Monika [2 ]
Taneja, Chetna [1 ]
Hwang, Sooyeon [3 ]
Kumar, G. V. Pavan [1 ]
Sheet, Goutam [2 ]
Rahman, Atikur [1 ]
机构
[1] Indian Inst Sci Educ & Res, Dept Phys, Dr Homi Bhabha Rd, Pune 411008, Maharashtra, India
[2] Indian Inst Sci Educ & Res Mohali, Dept Phys Sci, Sect 81, Mohali 140306, India
[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
关键词
CsPbBr3; ferroelectric crystals; nanoplatelets; piezoresponse force microscopy; solvothermal technique; CRYSTALS; PEROVSKITES; ORIGIN;
D O I
10.1002/adma.202403875
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
CsPbBr3 exhibits outstanding optoelectronic properties and thermal stability, making it a coveted material for detectors, light-emitting diodes, and solar cells. Despite observations of ferroelectricity in CsPbBr3 quantum dots, synthesizing bulk ferroelectric CsPbBr3 crystals has remained elusive, hindering its potential in next-generation optoelectronic devices like optical switches and ferroelectric photovoltaics. Here, a breakthrough is reported: a novel solvothermal technique enabling the growth of ferroelectric CsPbBr3 nanoplatelets with lateral dimensions in the tens of micrometers. This represents a significant step toward achieving large-area ferroelectric CsPbBr3 crystals. Unlike traditional methods, this approach allows for growth and crystallization of CsPbBr3 in alcohol solutions by enhancing precursor solubility. This study confirms the ferroelectric nature of these nanoplatelets using second harmonic generation, electrical characterizations, and piezoresponse force microscopy. This work paves the way for utilizing ferroelectric CsPbBr3 in novel optoelectronic devices, significantly expanding the potential of this material and opening doors for further exploration in this exciting field.
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页数:8
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