A Deep Analysis and Enhancing Photovoltaic Performance Above 31% with New Inorganic RbPbI3-Based Perovskite Solar Cells via DFT and SCAPS-1D

被引:9
|
作者
Rahman, Md. Ferdous [1 ]
Harun-Or-Rashid, Md. [1 ]
Islam, Md. Rasidul [2 ]
Irfan, Ahmad [3 ]
Chaudhry, Aijaz Rasool [4 ]
Rahman, Md. Atikur [5 ]
Al-Qaisi, Samah [6 ]
机构
[1] Begum Rokeya Univ, Dept Elect & Elect Engn, Adv Energy Mat & Solar Cell Res Lab, Rangpur 5400, Bangladesh
[2] Bangamata Sheikh Fojilatunnesa Mujib Sci & Technol, Dept Elect & Elect Engn, Jamalpur 2012, Bangladesh
[3] King Khalid Univ, Coll Sci, Dept Chem, Abha 61413, Saudi Arabia
[4] Univ Bisha, Coll Sci, Dept Phys, Bisha 61922, Saudi Arabia
[5] Pabna Univ Sci & Technol, Dept Phys, Pabna 6600, Bangladesh
[6] Palestinian Minist Educ & Higher Educ, Nablus P4060334, Palestine
关键词
electronic properties; optical properties; optoelectronic devices; perovskite; photovoltaic cell; power conversion efficiency (PCE); HALIDE PEROVSKITES; 1ST PRINCIPLES; EFFICIENCY; IODIDE;
D O I
10.1002/adts.202400476
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The inimitable structural, electronic, and optical properties of inorganic cubic rubidium-lead-halide perovskite have obtained significant attention. In this research, novel rubidium-lead-iodide (RbPbI3)-based perovskite solar cells incorporating Tin Sulfide (SnS2) is investigated as an efficient buffer layer, utilizing both Density Functional Theory (DFT) calculations and SCAPS-1D simulator. Primarily, DFT is used to compute the bandgap, partial density of states (PDOS), and optical properties of the RbPbI3 absorber, which are then applied in the SCAPS-1D simulator. An optimized Al/FTO/SnS2/RbPbI3/Au device is systematically studied. Additionally, the effect of various influencing factors are investigated such as layer bulk defect density, interface defect density, doping concentration, and thickness. The highest power conversion efficiency (PCE) of 31.11% is achieved for the SnS2 Electron Transport Layer (ETL), with a J(SC) of 32.47 mA cm(-2), V-OC of 1.10 V, and FF of 87.14% for the Al/FTO/SnS2/RbPbI3/Au structure. Characteristics of quantum efficiency (QE) are also analyzed. Therefore, SnS2 ETL demonstrates the robust potential for utilization in high-performance photovoltaic cells based on RbPbI3 perovskite.
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页数:12
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