Improving energy storage performance enabled by composition-induced dielectric behavior in PbHfO3-based ceramics under low electric fields

被引:1
|
作者
Chao, Wenna [1 ,2 ]
Hao, Jigong [1 ]
Du, Juan [1 ]
Li, Peng [1 ]
Li, Wei [1 ]
Yang, Tongqing [2 ]
机构
[1] Liaocheng Univ, Sch Mat Sci & Engn, Shandong Dept Educ, Lab Sensit & Devices, Liaocheng 252059, Peoples R China
[2] Tongji Univ, Key Lab Adv Civil Engn Mat, Minist Educ, Funct Mat Res Lab,Sch Mat Sci & Engn, 4800 Caoan Rd, Shanghai 201804, Peoples R China
基金
中国国家自然科学基金;
关键词
LEAD-FREE CERAMICS; EXCELLENT STABILITY; RAMAN-SCATTERING; DENSITY; TEMPERATURE; PBZRO3;
D O I
10.1039/d4tc02538e
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Antiferroelectric ceramics with high energy storage performance at low electric fields appear to be particularly important to meet the requirements of miniaturized devices with a high level of integration. In this work, Ti-doped PbHfO3 antiferroelectric ceramics were fabricated via a solid-state method. The PbHf0.99Ti0.01O3 bulk ceramics exhibit excellent energy storage performance (W-rec = 5.49 J cm(-3) at 200 kV cm(-1)) and high property stability (<5% over 20 degrees C-120 degrees C and 1-100 Hz), accompanied by the stabilization of the ferroelectric state. Based on the results of XRD refinement and numerical study, we found that the enlarged displacement space of B-site cations accounts for the enhanced polarization at a low electric field. PbHf0.09Ti0.01O3 ceramics exhibited giant potential in energy storage applications at low electric fields.
引用
收藏
页码:14590 / 14596
页数:7
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