Enhancement of H2O2 generation rate in porphyrin photocatalysts via crystal facets regulation to create strong internal electric field

被引:1
作者
Shao, Yunhang [1 ,2 ]
Zhang, Yaning [1 ,2 ]
Chen, Chaofeng [1 ,2 ]
Dou, Shuai [1 ,2 ]
Lou, Yang [1 ,2 ]
Dong, Yuming [1 ,2 ]
Zhu, Yongfa [3 ]
Pan, Chengsi [1 ,2 ]
机构
[1] Jiangnan Univ, Sch Chem & Mat Engn, Key Lab Synthet & Biol Colloids, Minist Educ, Wuxi 214122, Jiangsu, Peoples R China
[2] Jiangnan Univ, Int Joint Res Ctr Photorespons Mol & Mat, Wuxi 214122, Jiangsu, Peoples R China
[3] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
来源
CHINESE JOURNAL OF CATALYSIS | 2024年 / 61卷
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
Internal electric field; Facet control; Nanosheet; H; 2; O; generation; Porphyrin; CHARGE SEPARATION; HYDROGEN; SURFACE; NANOSTRUCTURES; OXIDE;
D O I
10.1016/S1872-2067(24)60039-2
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Three TCPP porphyrin-based nanosheet photocatalysts with exposed (400), (022), and (020) planes were synthesized using a dissolution-recrystallization method in a mixture of water and tetrahydrofuran (THF), methanol (MeOH), and ethylene glycol (EG). The TCPP photocatalyst with the exposed (400) surface exhibited the highest H 2 O 2 production rate of 29.33 mmol L -1 h -1 g -1 from only H 2 O and O 2 , surpassing the rates observed for ones with exposed (022) and (020) surfaces by factors of 2.7 and 4.1, respectively, and 1.3 times as that of the reported TCPP prepared by a base/acid self-assembling method. This enhancement can be attributed to the strong internal electric field and high carboxyl group content on the (400) surface, which hindered rapid charge recombination and facilitated challenging water oxidation. Hence, successful manipulation of porphyrin exposure to robust IEF planes enhances the photocatalytic activity of the system and provides valuable insights for the design and development of more efficient organic photocatalysts. (c) 2024, Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:205 / 214
页数:10
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