Spectral response measurement of double-junction thin-film photovoltaic devices: the impact of shunt resistance and bias voltage

被引:17
作者
Pravettoni, Mauro [1 ,2 ]
Galleano, Roberto [3 ]
Virtuani, Alessandro [1 ]
Muellejans, Harald [3 ]
Dunlop, Ewan D. [3 ]
机构
[1] Univ Appl Sci & Arts So Switzerland, Inst Appl Sustainabil Built Environm, Dept Environm Construct & Design, CH-6952 Canobbio, Switzerland
[2] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BW, England
[3] DG JRC, Inst Energy, Renewable Energy Unit, European Commiss, I-21027 Ispra, VA, Italy
关键词
photovoltaics; multijunction; thin film; spectral response; SOLAR-CELLS;
D O I
10.1088/0957-0233/22/4/045902
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Multijunction photovoltaic (PV) thin-film modules are becoming more and more important on the market, due to their low cost and improved module efficiency now well above 10%. The spectral response (SR) measurement of multijunction thin-film cells presents additional challenges with respect to the SR measurement procedure for single-junction devices. Several works have appeared in the last 15 years in the PV literature, describing certain measurement artefacts that typically appear when measuring the SR of multijunction cells without applying an appropriate voltage bias to the entire cell. In this paper, the authors revise the theoretical description of SR measurements on multijunction devices, show how to detect the possible origin of measurement artefacts from the dark SR and show why bias voltage sometimes is not enough to avoid such artefacts or why it is not even necessary. An experimental confirmation of the theoretical approach is finally given.
引用
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页数:10
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