Structural, electronic, and optical-absorption properties of 2D Si thin films

被引:0
作者
Saunders, Nicholas [1 ]
Palchoudhury, Soubantika [1 ]
Jakowski, Jacek [2 ]
Huang, Jingsong [3 ]
机构
[1] Univ Dayton, Dept Chem & Mat Engn, Dayton, OH 45469 USA
[2] Oak Ridge Natl Lab, Computat Sci & Engn Div, Oak Ridge, TN 37830 USA
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA
关键词
Crystalline; Si; Thin film; Absorption; Simulation; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; PHOTOVOLTAICS; SURFACES; CRYSTAL; SILICON;
D O I
10.1557/s43579-024-00657-x
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recent experimental studies highlighted the potential of thin-film crystalline silicon (Si) for high-efficiency solar cells. Using density functional theory, we investigated 2D Si thin films across various orientations, thicknesses, and surface structures to elucidate their structure-property relationships. Through surface-energy calculations and Wulff construction, we determined the crystal habit of Si, which aligns with available experimental observations. Electronic-structure calculations underscored the critical role of valence saturation on surfaces in enabling semiconducting behavior in Si thin films, essential for optical applications. From optical-absorption calculations, we identified the surface index exhibiting the highest absorption coefficients for thin films Si solar cell applications.
引用
收藏
页码:1273 / 1280
页数:8
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