Optimizing the Performance of the Atomic-Layer-Deposited Zinc-Tin-Oxide Thin Film Transistor by Ozone Treatment and Thermal Annealing

被引:4
作者
Choi, Jinheon [1 ,2 ]
Lee, Yonghee [1 ,2 ]
Kang, Sukin [1 ,2 ]
Mun, Sahngik Aaron [1 ,2 ]
Hwang, Cheol Seong [1 ,2 ]
机构
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea
关键词
amorphous oxide semiconductor; thin-film transistor; Zn-Sn-O; atomic layer deposition; post-deposition annealing; A-IGZO; SEMICONDUCTOR; TFTS;
D O I
10.1021/acsaelm.4c00916
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study investigated alterations in the physical and electrical characteristics of amorphous ZnSnO (a-ZTO) thin films deposited by atomic layer deposition and a-ZTO thin film transistors (TFTs) subjected to various post-deposition annealing (PDA) processes. The ozone treatment at 19 Torr pressure and 320 degrees C temperature, followed by additional thermal annealing at 600 degrees C for 1 h in a furnace under an air atmosphere, remarkably improved device performance, showing a similar to 390% increase in mobility compared to the as-deposited TFT. PDA processes affected the structural relaxation-driven carrier doping effect, oxygen defects, and hydrogen concentrations, influencing the reliability of the TFTs. Increasing PDA temperature generally increased the a-ZTO film density and decreased Urbach energy-related tail states, significantly increasing carrier mobility. In the negative gate bias stress tests, an abnormal hump was observed in the transfer characteristics, which was attributed to Sn-related ions trapped in the SiO2 gate insulator. In contrast, positive gate bias stress tests did not exhibit the hump but only a consistent shift of the transfer curve. The ozone and thermally treated sample showed significantly decreased threshold voltage shifts during the positive gate bias stress test. Finally, contact resistance between the Ti source and drain metals with the a-ZTO channel decreased by similar to 30% under optimized PDA compared to the as-deposited TFT. This reduction stemmed from the smooth interface between the contact metal and channel due to the densification and decreased tail states in the a-ZTO thin film.
引用
收藏
页码:5961 / 5972
页数:12
相关论文
共 46 条
[1]   Robustness of Passivated ALD Zinc Tin Oxide TFTs to Aging and Bias Stress [J].
Allemang, Christopher R. ;
Cho, Tae H. ;
Dasgupta, Neil P. ;
Peterson, Rebecca L. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (12) :6776-6782
[2]   High-Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition [J].
Allemang, Christopher R. ;
Cho, Tae H. ;
Trejo, Orlando ;
Ravan, Shantam ;
Rodriguez, Robin E. ;
Dasgupta, Neil P. ;
Peterson, Rebecca L. .
ADVANCED ELECTRONIC MATERIALS, 2020, 6 (07)
[3]   Enhancement of electrical performance of atomic layer deposited SnO films via substrate surface engineering [J].
Baek, In-Hwan ;
Cho, Ah-Jin ;
Lee, Ga Yeon ;
Choi, Heenang ;
Won, Sung Ok ;
Eom, Taeyong ;
Chung, Taek-Mo ;
Hwang, Cheol Seong ;
Kim, Seong Keun .
JOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (36) :12314-12321
[4]  
Barbalace K., 2007, ENV CHEMISTRYCOM, P4
[5]   Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors [J].
Chen, Hong-Chih ;
Chang, Ting-Chang ;
Lai, Wei-Chih ;
Chen, Guan-Fu ;
Chen, Bo-Wei ;
Hung, Yu-Ju ;
Chang, Kuo-Jui ;
Cheng, Kai-Chung ;
Huang, Chen-Shuo ;
Chen, Kuo-Kuang ;
Lu, Hsueh-Hsing ;
Lin, Yu-Hsin .
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (31) :25866-25870
[6]   High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].
Chiang, HQ ;
Wager, JF ;
Hoffman, RL ;
Jeong, J ;
Keszler, DA .
APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1
[7]   Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices [J].
Choi, Ae Rim ;
Lim, Dong Hyun ;
Shin, So-Yeon ;
Kang, Hye Joo ;
Kim, Dohee ;
Kim, Ja-Yong ;
Ahn, Youngbae ;
Ryu, Seung Wook ;
Oh, Il-Kwon .
CHEMISTRY OF MATERIALS, 2024, 36 (05) :2194-2219
[8]   A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors [J].
Fernandes, Cristina ;
Santa, Ana ;
Santos, Angelo ;
Bahubalindruni, Pydi ;
Deuermeier, Jonas ;
Martins, Rodrigo ;
Fortunato, Elvira ;
Barquinha, Pedro .
ADVANCED ELECTRONIC MATERIALS, 2018, 4 (07)
[9]  
Fu Z., 2022, 2022 International Electron Devices Meeting (IEDM)
[10]   Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor [J].
Fuh, Chur-Shyang ;
Liu, Po-Tsun ;
Huang, Wei-Hsun ;
Sze, Simon M. .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (11) :1103-1105