Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite Cs2SnI6 Thin Film for Low-Power ReRAM

被引：2
作者：
Kumar, Manoj [1 ,2 ]
Sharma, Harshit [1 ,2 ]
Srivastava, Ritu [1 ,2 ]
Kumar, Sushil [1 ,2 ]
机构：
[1] CSIR Natl Phys Lab, New Delhi 110012, India
[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 10期
关键词：
Perovskites; Lead; Substrates; Voltage measurement; Indium tin oxide; Voltage; Memristors; All inorganic lead-free perovskite; Cs2SnI6; low-powered electronic devices; resistive random access memories (ReRAM); resistive switching (RS);
D O I：
10.1109/TED.2024.3445311
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent advancement in the artificial intelligence and surge in the availability of complex information have accelerated the exploration of advanced information processing and storage devices. Perovskite-based synapses for memristor application have immense potential to imitate the biological synapses. Herein, all inorganic lead-free Cs2SnI6 perovskite is synthesized using CsI and SnI2 as precursors by solution process. Cs2SnI6 perovskite-based memristors with Al/Cs2SnI6/ITO configuration is investigated for resistive random access memories (ReRAMs). A model to comprehend the resistive switching (RS) behavior is proposed based on intrinsic defects properties and their migration resulting into the conducting path. Al/Cs2SnI6/ITO memristor exhibits the low set voltage and reset voltage with the compliance current of similar to 10(-4) A that signifies the low-power (similar to 10(-4) W) consumption in ReRAM devices. Also, high-resistance state (HRS)/low-resistance state (LRS) ratio, endurance, and retention are found to be >= 10, upto 160 cycles, and 10(4) s. The present investigation explores the environment friendly all inorganic lead-free Cs2SnI6 perovskite for low-power ReRAM. Index Terms-All inorganic lead-free perovskite, Cs2SnI6 , low-powered electronic devices, resistive random access memories (ReRAM), resistive switching (RS).
引用
收藏
页码：5997 / 6002
页数：6
相关论文
共 31 条
[21]   Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device [J].
Sun, Yiming ;
Tai, Meiqian ;
Song, Cheng ;
Wang, Ziyu ;
Yin, Jun ;
Li, Fan ;
Wu, Huaqiang ;
Zeng, Fei ;
Lin, Hong ;
Pan, Feng .
JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122 (11) :6431-6436
[22]   Advances in Lead-Free Perovskite Single Crystals: Fundamentals and Applications [J].
Tailor, Naveen Kumar ;
Kar, Shaoni ;
Mishra, Pranjal ;
These, Albert ;
Kupfer, Christian ;
Hu, Hanlin ;
Awais, Muhammad ;
Saidaminov, Makhsud ;
Dar, M. Ibrahim ;
Brabec, Christoph ;
Satapathi, Soumitra .
ACS MATERIALS LETTERS, 2021, 3 (07) :1025-1080
[23]   Lead-Free Cs2SnI6 Perovskites for Optoelectronic Applications: Recent Developments and Perspectives [J].
Ullah, Saad ;
Wang, Jiaming ;
Yang, Peixin ;
Liu, Linlin ;
Khan, Jansher ;
Yang, Shi-E. ;
Xia, Tianyu ;
Guo, Haizhong ;
Chen, Yongsheng .
SOLAR RRL, 2021, 5 (05)
[24]   Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges [J].
Waser, Rainer ;
Dittmann, Regina ;
Staikov, Georgi ;
Szot, Kristof .
ADVANCED MATERIALS, 2009, 21 (25-26) :2632-+
[25]   The optoelectronic properties improvement of double perovskites Cs2SnI6 by anionic doping (F-) [J].
Wu, Junsheng ;
Zhao, Zhuo ;
Zhou, Yanwen .
SCIENTIFIC REPORTS, 2022, 12 (01)
[26]   One-step solution synthesis and stability study of inorganic perovskite semiconductor Cs2SnI6 [J].
Xiao Nairui ;
Tang Yehua ;
Qiu Yali ;
Liu Duoduo ;
Wang Ke-Fan .
SOLAR ENERGY, 2020, 204 :429-439
[27]   Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications [J].
Xiao, Xinyu ;
Hu, Jing ;
Tang, Sheng ;
Yan, Kai ;
Gao, Bo ;
Chen, Hunglin ;
Zou, Dechun .
ADVANCED MATERIALS TECHNOLOGIES, 2020, 5 (06)
[28]   A review of memristor: material and structure design, device performance, applications and prospects [J].
Xiao, Yongyue ;
Jiang, Bei ;
Zhang, Zihao ;
Ke, Shanwu ;
Jin, Yaoyao ;
Wen, Xin ;
Ye, Cong .
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2023, 24 (01)
[29]   High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3 [J].
Yan, Zhibo ;
Guo, Yanyan ;
Zhang, Guoquan ;
Liu, J. -M. .
ADVANCED MATERIALS, 2011, 23 (11) :1351-1355
[30]   1D Hexagonal HC(NH2)2PbI3 for Multilevel Resistive Switching Nonvolatile Memory [J].
Yang, June-Mo ;
Kim, Seul-Gi ;
Seo, Ja-Young ;
Cuhadar, Can ;
Son, Dae-Yong ;
Lee, Donghwa ;
Park, Nam-Gyu .
ADVANCED ELECTRONIC MATERIALS, 2018, 4 (09)
1234