Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite Cs2SnI6 Thin Film for Low-Power ReRAM

Recent advancement in the artificial intelligence and surge in the availability of complex information have accelerated the exploration of advanced information processing and storage devices. Perovskite-based synapses for memristor application have immense potential to imitate the biological synapses. Herein, all inorganic lead-free Cs2SnI6 perovskite is synthesized using CsI and SnI2 as precursors by solution process. Cs2SnI6 perovskite-based memristors with Al/Cs2SnI6/ITO configuration is investigated for resistive random access memories (ReRAMs). A model to comprehend the resistive switching (RS) behavior is proposed based on intrinsic defects properties and their migration resulting into the conducting path. Al/Cs2SnI6/ITO memristor exhibits the low set voltage and reset voltage with the compliance current of similar to 10(-4) A that signifies the low-power (similar to 10(-4) W) consumption in ReRAM devices. Also, high-resistance state (HRS)/low-resistance state (LRS) ratio, endurance, and retention are found to be >= 10, upto 160 cycles, and 10(4) s. The present investigation explores the environment friendly all inorganic lead-free Cs2SnI6 perovskite for low-power ReRAM. Index Terms-All inorganic lead-free perovskite, Cs2SnI6 , low-powered electronic devices, resistive random access memories (ReRAM), resistive switching (RS).