Strain and orientation modulated optoelectronic properties of La-doped SrSnO3 epitaxial films

被引:1
作者
Zheng, Huan [1 ,2 ]
Liu, Bingjie [1 ,2 ]
Huang, Can [1 ,2 ]
Li, Kaifeng [1 ,2 ]
Wang, Shuhao [1 ,2 ]
Ma, Chunlan [3 ]
Wang, Caixia [4 ]
Zhang, Lei [5 ]
Yang, Hao [1 ,2 ]
Qian, Fengjiao [1 ,2 ]
Zhu, Yan [1 ,2 ]
Fan, Jiyu [1 ,2 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Dept Appl Phys, Nanjing 211106, Peoples R China
[2] Nanjing Univ Aeronaut & Astronaut, Key Lab Aerosp Informat Mat & Phys NUAA, MIIT, Nanjing 211106, Peoples R China
[3] Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heat Fluid Flow Techn, Suzhou 215009, Peoples R China
[4] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
[5] Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
基金
中国国家自然科学基金;
关键词
SrSnO3; Strain; Orientation; TCO; Metal-semiconductor transition; Band gap; DFT; BAND-STRUCTURE; X-RAY; BASNO3; OXIDE; FERROELECTRICITY; PSEUDOPOTENTIALS; THICKNESS; MOBILITY; OXYGEN; STATE;
D O I
10.1016/j.apsusc.2024.160752
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied the structural, electrical, and optical properties of La 0.05 Sr 0.95 SnO 3 thin films, which exhibited a strong dependence upon the substrate's orientation and strain. X-ray diffraction results show that the LSSO films grow epitaxially on (001) and (011)-oriented LaAlO3 3 substrates, and the in-plane compressive strain decreases gradually upon increasing film thickness. Room-temperature resistivity varies from 4.23 (13.0) to 1.37 (4.76) m Omega Omega cm as the film thickness increases for (001) orientation ((01 1) orientation). Temperature dependent resistivity curves of all the samples show a metal-semiconductor transition (MST), which can be explained by the electron-electron interactions below MST rather than weak localization. Both reducing the in-plane compressive strain and transferring the orientation from (011) to (001) can drive the MST point shifts toward lower temperature, indicative of the enhancement of the metallic transport in the films. The band gap increases upon increasing film thickness due to Burstein-Moss effect. The charge distributions of Sn and O from density functional theory (DFT) calculations illustrate that (001)-plane has a better conductivity. Furthermore, our DFT results also demonstrate that decreasing the in-plane strain will lead to a smaller electron effective mass, thus the increased carrier mobility can be obtained. These comprehensive investigations advance our knowledge of the optoelectronic characteristics and provide valuable insights for future research in related transparent materials.
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页数:10
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