In-plane anisotropic magnetoresistance and planar Hall effect in off-stoichiometric single crystal Mn3Ga

被引:0
作者
Song, Linxuan [1 ]
Zhou, Feng [1 ,2 ]
Chen, Jie [1 ,2 ]
Li, Hang [1 ,2 ]
Xi, Xuekui [1 ]
Lau, Yong-Chang [1 ,3 ]
Wang, Wenhong [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Tiangong Univ, Sch Elect & Informat Engn, Tianjin 300387, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
国家重点研发计划; 中国博士后科学基金; 北京市自然科学基金; 中国国家自然科学基金;
关键词
ANTIFERROMAGNET;
D O I
10.1063/5.0217524
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the observation of in-plane anisotropic magnetoresistance (AMR) and planar Hall effect in our recently discovered kagome antiferromagnetic off-stoichiometric single crystal of Mn3Ga. We found that the in-plane AMR is dominated by a sixfold symmetry at low temperature due to the kagome lattice magnetocrystalline anisotropy. However, an unusual fourfold symmetry is also revealed by the angular-dependent AMR measurements, which originates from the little distortion of the crystal accompanying the slight ferromagnetic transition. Moreover, we also found a clear planar Hall effect signal in off-stoichiometric single crystal of Mn3Ga, which may be related to the chiral anomaly, one of the signatures of the magnetic Weyl fermions.
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页数:7
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