Characterization of alane (AlH3) thin films grown by atomic layer deposition for hydrogen storage applications

Alane (AlH3) 3 ) is an increasingly favored material for hydrogen and energy storage. It has demonstrated its potential in various applications, including rocket fuel, explosives, reducing agents, and serving as a viable source of hydrogen for portable fuel cells. In this study, we present the fabrication, morphology and elemental characterization of an AlH3 3 thin film grown through atomic layer deposition using a dimethylethylamine alane (DMEAA; AlH3N(CH3)2(CH2CH3)) 3 N(CH 3 ) 2 (CH 2 CH 3 )) precursor. The AlH3 3 thin film exhibited a rough surface with a white-like appearance, forming coarse grains as observed via scanning electron microscopy. X-ray diffraction confirmed the presence of AlH3 3 and it was compared with an aluminum thin film. Energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy confirmed the presence of pure AlH3 3 under a very thin aluminum oxide surface layer. Additionally, we propose a dissociation reaction mechanism based on the DMEAA precursor. Our work contributes to the advancement of hydrogen storage materials and energy-related applications that necessitate high hydrogen storage capacity and energy efficiency.