Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate

被引：4

作者：

Menichelli, Mauro ^{[1
]}

Antognini, Luca ^{[2
]}

Aziz, Saba ^{[3
,4
]}

Bashiri, Aishah ^{[5
,6
]}

Bizzarri, Marco ^{[1
,7
]}

Calcagnile, Lucio ^{[3
,4
]}

Caprai, Mirco ^{[1
]}

Caputo, Domenico ^{[8
,9
]}

Caricato, Anna Paola ^{[3
,4
]}

Catalano, Roberto ^{[10
]}

Chila, Deborah ^{[11
,12
]}

Cirrone, Giuseppe Antonio Pablo ^{[10
]}

Croci, Tommaso ^{[1
,13
]}

Cuttone, Giacomo ^{[10
]}

Cesare, Giampiero De ^{[8
,9
]}

Dunand, Sylvain ^{[2
]}

Fabi, Michele ^{[11
,14
]}

Frontini, Luca ^{[15
]}

Grimani, Catia ^{[11
,14
]}

Ionica, Maria ^{[1
]}

Kanxheri, Keida ^{[1
,7
]}

Large, Matthew ^{[5
]}

Liberali, Valentino ^{[15
]}

Lovecchio, Nicola ^{[8
,9
]}

Martino, Maurizio ^{[3
,4
]}

Maruccio, Giuseppe ^{[3
,4
]}

Mazza, Giovanni ^{[16
]}

Monteduro, Anna Grazia ^{[3
,4
]}

Morozzi, Arianna ^{[1
]}

Moscatelli, Francesco ^{[1
,17
]}

Nascetti, Augusto ^{[8
,18
]}

Pallotta, Stefania ^{[11
,12
]}

Papi, Andrea ^{[1
]}

Passeri, Daniele ^{[1
,13
]}

Pedio, Maddalena ^{[1
,17
]}

Petasecca, Marco ^{[5
]}

Petringa, Giada ^{[10
]}

Peverini, Francesca ^{[1
,7
]}

Piccolo, Lorenzo ^{[16
]}

Placidi, Pisana ^{[1
,13
]}

Quarta, Gianluca ^{[3
,4
]}

Rizzato, Silvia ^{[3
,4
]}

Rossi, Giulia ^{[1
,7
]}

Sabbatini, Federico ^{[11
,14
]}

Servoli, Leonello ^{[1
]}

Stabile, Alberto ^{[15
]}

Talamonti, Cinzia ^{[11
,12
]}

Thomet, Jonathan Emanuel ^{[2
]}

Tosti, Luca ^{[1
]}

Villani, Mattia ^{[11
,14
]}

机构：

[1] Natl Inst Nucl Phys INFN, I-06123 Perugia, Italy

[2] Ecole Polytech Fed Lausanne EPFL, Inst Elect & Microengn IME, CH-2000 Neuchatel, Switzerland

[3] Univ Salento, Natl Inst Nucl Phys INFN, I-73100 Lecce, Italy

[4] Univ Salento, Dipartimento Matemat & Fis, I-73100 Lecce, Italy

[5] Univ Wollongong, Ctr Med Radiat Phys, Wollongong, NSW 2522, Australia

[6] Najran Univ, Dept Phys, Najran 11001, Saudi Arabia

[7] Univ Perugia, Dipartimento Fis & Geol, I-06123 Perugia, Italy

[8] INFN Sez Roma, I-00185 Rome, Italy

[9] Univ Roma, Dipartimento Ingn Informaz Elettron & Telecomunica, I-00184 Rome, Italy

[10] INFN Lab Nazl Sud, I-95123 Catania, Italy

[11] INFN Sez Firenze, I-50019 Sesto Fiorentino, Italy

[12] Univ Florence, Dept Expt & Clin Biomed Sci Mario Serio, I-50135 Florence, Italy

[13] Univ Perugia, Dipartimento Ingn, I-06125 Perugia, Italy

[14] Univ Urbino Carlo Bo, Dipartimento Sci Pure & Applicate, I-61029 Urbino, Italy

[15] INFN Sez Milano, I-20133 Milan, Italy

[16] INFN Sez Torino, I-10125 Turin, Italy

[17] CNR, IOM, I-06123 Perugia, Italy

[18] Univ Roma, Scuola Ingn Aerosp, I-00138 Rome, Italy

[19] CNR, Ist Struttura Mat, I-00133 Rome, Italy

来源：

IEEE SENSORS JOURNAL | 2024年 / 24卷 / 08期

关键词：

Detectors; Voltage measurement; Current measurement; Temperature measurement; Photoconductivity; Monitoring; Sensor phenomena and characterization; Flexible detectors; hydrogenated amorphous silicon (a-Si:H) detectors; radiation detectors; DAMAGE;

D O I：

10.1109/JSEN.2024.3359861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates such as polyimide (PI). For these properties, a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (X-ray, electron, gamma ray, and proton detection) and radiotherapy, radiation flux measurement for space applications (study of solar energetic particles and stellar events), and neutron flux measurements. In this article, we have studied the dosimetric X-ray response of n-i-p diodes deposited on PI. We measured the linearity of the photocurrent response to X-rays versus dose rate from which we have extracted the dosimetric X-ray sensitivity at various bias voltages. In particular, low bias voltage operation has been studied to assess the high energy efficiency of these kinds of sensors. A measurement of stability of X-ray response versus time has been shown. The effect of detectors annealing has been studied. Operation under bending at various bending radii is also shown.

引用

页码：12466 / 12471

页数：6

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