Surface Defect Recovery in Perovskite Nanocrystals with Excess Halide for Core-Shell Structure

被引:0
|
作者
Lee, Dong Hyeon [1 ]
Jeong, Woo Hyeon [2 ]
Choung, Seokhyun [3 ]
Jang, Ji Won [4 ,5 ]
Lee, Gyudong [6 ,7 ]
Song, Hochan [4 ,5 ]
Han, Sanghun [8 ]
Seok, Gyeong Eun [2 ]
Kim, Jihoon [2 ]
Han, Myeonggeun [1 ]
Han, Jeong Woo [3 ,9 ]
Choi, Hyosung [4 ,5 ]
Choi, Jongmin [8 ]
Lee, Bo Ram [2 ]
Noh, Yong-Young [1 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 37673, South Korea
[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
[3] Seoul Natl Univ, Dept Mat Sci & Engn, Res Inst Adv Mat, Seoul 08826, South Korea
[4] Hanyang Univ, Res Inst Convergence Basic Sci, Dept Chem, Seoul 04763, South Korea
[5] Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South Korea
[6] Daegu Gyeongbuk Inst Sci & Technol DGIST Daegu, Div Nanotechnol, Daegu 42988, South Korea
[7] DGIST ETH Microrobot Res Ctr, Daegu 42988, South Korea
[8] Daegu Gyeongbuk Inst Sci & Technol DGIST, Dept Energy Sci & Engn, Daegu 42988, South Korea
[9] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
来源
ACS ENERGY LETTERS | 2024年 / 9卷 / 11期
基金
新加坡国家研究基金会;
关键词
QUANTUM DOTS; CSPBBR3; NANOCRYSTALS; BRIGHT; CSPBX3; BR;
D O I
10.1021/acsenergylett.4c01870
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present a method to synthesize stable and uniform high-quality perovskite nanocrystals (PNCs) by using excess halide to recover surface defects in CsPbBr3/ZnS core/shell nanocrystals. Use of N-bromosuccinimide as a halide donor recovered surface halide vacancies of bare CsPbBr3 PNCs during the growth of the ZnS shell, as confirmed by DFT calculations. This approach achieves a high photoluminescence quantum yield of nearly 1, and significantly increases the stability of PNCs under adverse conditions such as high humidity and elevated temperature. CsPbBr3/ZnS PNC light-emitting diodes demonstrated outstanding luminous characteristics, with a remarkable external quantum efficiency of 12.77% and a maximum luminance of 1449 cd m(-2) at 517 nm. These characteristics of the PNCs will have a wide variety of applications and will help enable development of highly efficient optoelectronic devices.
引用
收藏
页码:5413 / 5420
页数:8
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