High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode

被引：0
作者：
Wu, Nan [1 ,2 ]
Jin, Zhi [1 ,2 ]
Zhou, Jingtao [1 ,2 ]
Wei, Haomiao [1 ,2 ,3 ]
Liu, Zhicheng
Lin, Jianming [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, High Frequency High Voltage Devices & Integrated C, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2024年 / 12卷
关键词：
Schottky diodes; Electron devices; Power generation; Power harmonic filters; Frequency conversion; Anodes; Terahertz communications; Thz; frequency doubler; GaAs; high power; DESIGN;
D O I：
10.1109/JEDS.2024.3453122
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The research on high power 190 GHz doubler based on the GaAs Schottky diodes is proposed in this paper. The frequency doubler comprises a improved diode configuration that increases the number of anodes by changing the diode arrangement to improve power handling capacity. Electromagnetic and thermal simulation is utilized to demonstrate that the doubler can carry more power. The input power is gradually pumping from 200 mW to 500 mW with an applied DC bias of -15 V. And the peak efficiency of the doubler is measured to be 17%, while the maximum output power is 85 mW at 190 GHz.
引用
收藏
页码：717 / 722
页数：6
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