Growth and characterization of micro-LED based on GaN substrate

被引:0
作者
Wang, Guobin [1 ,2 ,3 ]
Huang, Jinpeng [4 ]
Wang, Yang [3 ]
Tao, Tao [4 ]
Zhu, Xiaohui [3 ]
Wang, Ziwei [5 ,6 ,7 ,8 ]
Li, Kai [1 ,2 ]
Wang, Yuning [1 ,2 ]
Su, Xujun [2 ,3 ]
Wang, Jianfeng [2 ,9 ]
Liu, Bin [3 ]
Cao, Bing [5 ,6 ,7 ]
Xu, Ke [1 ,2 ,3 ,9 ]
机构
[1] Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Anhui, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Suzhou 215123, Jiangsu, Peoples R China
[3] Jiangsu Inst Adv Semicond, Suzhou 215123, Jiangsu, Peoples R China
[4] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China
[5] Soochow Univ, Sch Optoelect Sci & Engn, Suzhou 215006, Jiangsu, Peoples R China
[6] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215006, Jiangsu, Peoples R China
[7] Soochow Univ, Key Lab Adv Opt Mfg Technol Jiangsu Prov, Suzhou 215006, Jiangsu, Peoples R China
[8] Soochow Univ, Minist China, Key Lab Modern Opt Technol Educ, Suzhou 215006, Jiangsu, Peoples R China
[9] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Jiangsu, Peoples R China
来源
OPTICS EXPRESS | 2024年 / 32卷 / 18期
关键词
LIGHT-EMITTING-DIODES; SURFACE PASSIVATION; HIGH-EFFICIENCY;
D O I
10.1364/OE.529771
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
As the diminution of micro-LED pixels advances, the pivotal role of dislocation phenomena becomes increasingly pronounced. This study provides insight into the key characteristics and dominant mechanisms of GaN-based micro-LEDs by comparing the homoepitaxial and heteroepitaxial configurations. Our findings reveal that variability in V-shaped pits distribution markedly influences the performance and uniformity of micro-LED chips. While the homoepitaxial micro-LEDs, alongside significantly reduced dislocation density and residual stress, effectively preclude the formation of them and thus ensuring superior uniformity both within and among micro-LED chips. Notably, the external quantum efficiency (EQE) peak of homoepitaxial micro-LEDs surpasses that of heteroepitaxial variants by 40%. Motivated by the realization that the reduced MQW thickness at the sidewalls of V-shaped pit aids carrier injection, a great enhancement in EQE from 7.9% to 14.8% (@ 10 A/cm2) was achieved by the optimization of homoepitaxial structure. Therefore, the growth of micro-LED with lower dislocation density, lower residual stress, and epi-structure of low-energy-barrier MQWs demonstrated the profound impact on advancing micro-LED technology to obtain the performance of high uniformity, high brightness, and low power consumption. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:31463 / 31472
页数:10
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