Purely Electric-Driven Field-Free Magnetization Switching in L10-FePt Single Film for Reconfigurable Spin Logic Computing

被引:1
|
作者
Wang, Yuanbo [1 ]
Zhang, Jingyan [1 ]
Dou, Pengwei [1 ]
Deng, Xiao [1 ]
Zhao, Yunchi [2 ]
Qi, Jie [3 ]
Zhang, Yi [1 ]
Shao, Bokai [1 ]
Xu, Jiawang [3 ]
Zheng, Xinqi [1 ]
Huang, He [1 ]
Wu, Yanfei [1 ]
Shen, Baogen [3 ]
Wang, Shouguo [1 ,3 ]
机构
[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Anhui Univ, Sch Mat Sci & Engn, Anhui Key Lab Magnet Funct Mat & Devices, Hefei 230601, Peoples R China
来源
ADVANCED ELECTRONIC MATERIALS | 2025年 / 11卷 / 02期
基金
北京市自然科学基金;
关键词
lateral gradients; spin logic-in-memory; spin-orbit torques; sputtered single L10-FePt magnet; ORBIT TORQUE; PERPENDICULAR MAGNETIZATION;
D O I
10.1002/aelm.202400270
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Magnetization switching driven by spin-orbit torques (SOTs) in perpendicular single magnets contributes to the development of high-efficiency next-generation spintronic memory and logic. However, the in-plane magnetic fields required for deterministic magnetization switching in single magnets hamper the design of all-electric-control devices. Herein, a simple, efficient, and reliable all-electric-control magnetization switching in a sputtered single L1(0)-FePt film with an artificial lateral gradient is reported. The deterministic magnetization switching exhibits a strong angle dependence and can be effectively tuned through lateral asymmetry. A maximum self-switching ratio of 18% is achieved without magnetic fields. The structural characterization results reveal that this deterministic magnetization self-switching can be primarily attributed to the ordering degree gradient. Furthermore, a programmable Boolean logic device together with a full adder is constructed using the single L1(0)-FePt magnet. The findings of the study highlight an effective route to accomplish electrical spin manipulation in single magnets. This enables the design of purely electrically controlled SOTs-based logic and in-memory computing.
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页数:9
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