Formation of Bound States and Control of Their Localization in a Double Quantum Dot at the Edge of the Two-Dimensional Topological Insulator with Magnetic Barriers

被引：0

作者：

Lavrukhina, E. A. ^{[1
]}

Khomitsky, D. V. ^{[1
]}

Telezhnikov, A. V. ^{[1
]}

机构：

[1] Natl Res Nizhny Novgorod State Univ, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2024年 / 58卷 / 04期

关键词：

topological insulator; magnetic barrier; double quantum dot; localization;

D O I：

10.1134/S1063782624040109

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The model of the bound states in a double quantum dot formed by three magnetic barriers at the edge of two-dimensional topological insulator based on HgTe/CdTe quantum well is developed. The peculiarities of the energy spectrum, the probability density and the spin density of the quantum states are studied as a function of the orientation of the magnetization vector for the magnetic barriers. The wavefunction localization at the left and at the right of the anticrossing point in the spectrum is studied and the conclusion is made on the possibility of switching between the states with the localization area in different quantum dots by varying the polarization of the middle barrier.

引用

页码：335 / 338

页数：4

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