Unveiling the Carrier Dynamics of Perovskite Light-Emitting Diodes via Transient Electroluminescence

被引:2
|
作者
Shen, Yang [1 ]
Hu, Xin-Mei [2 ]
Guo, Ming-Lei [2 ]
Li, Yan-Qing [3 ]
Tang, Jian-Xin [1 ,2 ]
机构
[1] Macau Univ Sci & Technol, Macao Inst Mat Sci & Engn MIMSE, Fac Innovat Engn, Taipa 999078, Macao, Peoples R China
[2] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China
[3] East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2024年 / 15卷 / 31期
基金
中国国家自然科学基金;
关键词
Carrier dynamics - Carrier recombination - Carriers transport - Device operations - Device performance - Interface engineering - Lightemitting diode - Optoelectronics property - Size-distribution - Transient electroluminescence;
D O I
10.1021/acs.jpclett.4c01971
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Perovskite light-emitting diodes (PeLEDs) have garnered significant attention due to their outstanding optoelectronic properties. However, investigating carrier transport and recombination behavior during device operation poses persistent challenges. In this study, we explore the impact of additive and interface engineering on device performance using transient electroluminescence (TREL). Polyethylene glycol (PEG) induces the formation of square-faceted nanocrystals with a homogeneous size distribution and extended fluorescence lifetime. Consequently, these PeLEDs exhibit remarkable stability. Additionally, employing an electron transport layer of 2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazine (PO-T2T), which has a better match to the energy bands of the perovskite layer and a higher carrier mobility, allows for lower turn-on voltage and faster response but also suffers from a short decay time and poor stability. Moreover, low-temperature TREL characterization shows that the carrier mobility is also significantly suppressed with decreasing temperature, which reduces the transient response speed.
引用
收藏
页码:7916 / 7923
页数:8
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