A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference

被引:0
作者
Cheng, Tiedong [1 ]
Gong, Xinlv [1 ]
机构
[1] Jiangxi Univ Sci & Technol, Sch Elect Engn & Automat, Ganzhou 341001, Peoples R China
关键词
Low power; Subthreshold; CMOS voltage reference; Temperature coefficient; REFERENCE CIRCUIT; PSRR; BANDGAP;
D O I
10.1016/j.mejo.2024.106389
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
- A low temperature coefficient (TC), low power subthreshold CMOS voltage reference (CVR) over a wide temperature range is presented in this paper. The proposed circuit employs the voltage difference between the two inputs of the operational amplifier as the proportional to absolute temperature (PTAT) voltage and the complementary to absolute temperature (CTAT) voltage, which is obtained by the Delta V GS of different-threshold transistors biased in the subthreshold region. The proposed CVR was designed in the 0.18-mu m CMOS process with a total area of 0.0049 mm2. 2 . It achieves an average temperature coefficient (TC) of 10.3 ppm/degrees C degrees C over a temperature range of-40 degrees C-120 degrees C, with a TC of 4.9 ppm/degrees C degrees C at the TT corner. The measured power supply rejection ratio (PSRR) is-65 dB at 10 Hz and-30 dB at 1 MHz, while the power consumption is 59 nW at a supply voltage of 1 V. The average line sensitivity (LS) is 0.16 %/V, and the LS is 0.09 %/V at the TT corner.
引用
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页数:8
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共 25 条
  • [1] A Novel Wide-Temperature-Range, 3.9 ppm/°C CMOS Bandgap Reference Circuit
    Andreou, Charalambos M.
    Koudounas, Savvas
    Georgiou, Julius
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (02) : 574 - 581
  • [2] A 1.16-V 5.8-to-13.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference Circuit With a Shared Offset-Cancellation Method for Internal Amplifiers
    Chen, Keng
    Petruzzi, Luca
    Hulfachor, Ronald
    Onabajo, Marvin
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (01) : 267 - 276
  • [3] Dong Q, 2016, SYMP VLSI CIRCUITS
  • [4] A Novel 0.8-V 79-nW CMOS-Only Voltage Reference With-55-dB PSRR @ 100 Hz
    Duan, Jihai
    Zhu, Zhiyong
    Deng, Jinli
    Xu, Weilin
    Wei, Baolin
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65 (07) : 849 - 853
  • [5] A 2.1 ppm/°C, 0.55-2.4 V, 5.6 nW, 235 mV, CMOS-only subthreshold voltage reference
    Duan, Quanzhen
    Lin, Chenxi
    Liu, Peiju
    Huang, S.
    Meng, Zhen
    [J]. MICROELECTRONICS JOURNAL, 2021, 113 (113):
  • [6] Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW
    Fassio, Luigi
    Lin, Longyang
    De Rose, Raffaele
    Lanuzza, Marco
    Crupi, Felice
    Alioto, Massimo
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (10) : 3134 - 3144
  • [7] Low Noise, High PSRR, High-Order Piecewise Curvature Compensated CMOS Bandgap Reference
    Fu, Ximing
    Colombo, Dalton Martini
    Yin, Yadong
    El-Sankary, Kamal
    [J]. IEEE ACCESS, 2022, 10 : 110970 - 110982
  • [8] A 0.6-V Minimum-Supply, 23.5 ppm/°C Subthreshold CMOS Voltage Reference With 0.45% Variation Coefficient
    Huang, Chenyu
    Zhan, Chenchang
    He, Linjun
    Wang, Lidan
    Nan, Yang
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65 (10) : 1290 - 1294
  • [9] A 79 pW, 106 ppm/°C NMOS-only current reference with leakage current isolation based on body bias technique
    Huang, Wenjian
    Zeng, Yanhan
    Yang, Jingci
    Li, Yongfu
    [J]. AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2023, 161
  • [10] A 192-pW Voltage Reference Generating Bandgap- Vth With Process and Temperature Dependence Compensation
    Ji, Youngwoo
    Lee, Jungho
    Kim, Byungsub
    Park, Hong-June
    Sim, Jae-Yoon
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2019, 54 (12) : 3281 - 3291